Light emitting diode display device

Abstract

Disclosed is a light emitting diode display device for minimizing a screen defect caused by a defect of a light emitting diode device. The light emitting diode display device includes a plurality of subpixels which each include first to Nth (where N is a natural number equal to or greater than two) light emitting diode devices emitting light with the data current and a pixel circuit including first to Nth driving transistors respectively supplying the data current corresponding to a data signal to the first to Nth light emitting diode devices.

What is claimed is: 
     
         1 . A light emitting diode display device comprising:
 a plurality of subpixels, wherein at least one or more of the plurality of subpixels include:   at least one light emitting diode device emitting light;   a pixel circuit including at least one driving transistor supplying a data current corresponding to a data signal to the at least one light emitting diode device;   an insulation layer covering the pixel circuit;   a planarization layer on the insulation layer; and   an adhesive member between the insulation layer and the at least one light emitting diode device,   wherein each of the at least one light emitting diode device includes:   a first portion including a first electrode and a second electrode; and   a second portion opposite to the first portion, and   wherein the adhesive member is interposed between the second portion of each of the at least one light emitting diode device and the insulation layer.   
     
     
         2 . The light emitting diode display device of  claim 1 , wherein the at least one light emitting diode device comprises two or more light emitting diode devices, and when any one of the two or more light emitting diode devices has a defect, at least one remaining light emitting diode device of the two or more light emitting diode devices is used as a redundancy light emitting diode device. 
     
     
         3 . The light emitting diode display device of  claim 1 , wherein each of the at least one light emitting diode device is a micro light emitting diode device. 
     
     
         4 . The light emitting diode display device of  claim 1 , wherein each of the at least one light emitting diode device comprises:
 a first semiconductor layer;   an active layer provided on one side of the first semiconductor layer; and   a second semiconductor layer provided on the active layer,   wherein the first electrode is provided on the second semiconductor layer, and   wherein the second electrode is provided on another side of the first semiconductor layer, and is physically separate from the active layer and the second semiconductor layer.   
     
     
         5 . The light emitting diode display device of  claim 4 , wherein each of the at least one or more of the plurality of subpixels further comprises:
 a common electrode connected to the second electrode of the at least one light emitting diode device, and   at least one pixel electrode configured to connect the first electrode of the at least one light emitting diode device to the at least one driving transistor in a one-to-one relationship.   
     
     
         6 . The light emitting diode display device of  claim 4 , wherein each of the at least one or more of the plurality of subpixels further comprises at least one concave portion provided to the planarization layer for accommodating the at least one light emitting diode device, and
 wherein the adhesive member is interposed between the at least one light emitting diode device and the at least one concave portion.   
     
     
         7 . The light emitting diode display device of  claim 1 , wherein the planarization layer comprises:
 a first planarization layer disposed on the insulation layer; and   a second planarization layer disposed on the first planarization layer and the at least one light emitting diode device,   wherein the at least one light emitting diode device is embedded in the second planarization layer.   
     
     
         8 . The light emitting diode display device of  claim 1 , wherein the at least one light emitting diode device comprises a first light emitting diode device and a second light emitting diode device,
 wherein the pixel circuit comprises:   a switching transistor supplying the data signal, supplied through a data line, to a common node in response to a gate signal;   a first current output part including a first driving transistor supplying the data current, corresponding to the data signal supplied to the common node, to the first light emitting diode device; and   a second current output part including a second driving transistor supplying the data current, corresponding to the data signal supplied to the common node, to the second light emitting diode device, and   wherein, the common node is shared by the first current output part and the second current output part.   
     
     
         9 . The light emitting diode display device of  claim 8 , wherein the first current output part further comprises a first capacitor connected between a gate electrode and a source electrode of the first driving transistor; and
 the second current output part further comprises a second capacitor connected between a gate electrode and a source electrode of the second driving transistor.   
     
     
         10 . The light emitting diode display device of  claim 1 , wherein the at least one light emitting diode device comprises a first light emitting diode device and a second light emitting diode device, wherein the pixel circuit comprises:
 a switching transistor supplying the data signal, supplied through a data line, to a first node;   a storage capacitor including a first terminal connected to the first node and a second terminal connected to a second node;   a first current output part including a first driving transistor supplying the data current, corresponding to the data signal supplied to the second node, to the first light emitting diode device;   a second current output part including a second driving transistor supplying the data current, corresponding to the data signal supplied to the second node, to the second light emitting diode device; and   a voltage initialization part initializing a voltage of the first node and a voltage of the second node,   wherein, the first node is disposed between the switching transistor and the storage capacitor, and the second node is shared by the first current output part and the second current output part.   
     
     
         11 . The light emitting diode display device of  claim 10 , wherein the first current output part further comprises a first emission control transistor connected between the first driving transistor and the first light emitting diode device, and
 the second current output part further comprises a second emission control transistor connected between the second driving transistor and the second light emitting diode device.   
     
     
         12 . The light emitting diode display device of  claim 11 , wherein the voltage initialization part comprises:
 a first transistor connected between a gate electrode and a source electrode of the first driving transistor,   a second transistor connected between the first node and a reference power line through which a reference voltage is supplied, and   a third transistor connected between the reference power line and a third node between the first emission control transistor and the first light emitting diode device.   
     
     
         13 . A display device comprising:
 a plurality of subpixels, wherein one or more of the plurality of subpixels have a first light emitting diode and a second light emitting diode,   an insulation layer under the first and second light emitting diodes;   a planarization layer on the insulation layer; and   an adhesive member between each of the first and second light emitting diodes and the insulation layer,   wherein each of the first and second light emitting diodes includes:   a first portion including a first electrode and a second electrode; and   a second portion opposite to the first portion,   wherein the first electrodes of the first and second light emitting diodes are commonly connected, and the second electrodes of the first and second light emitting diodes are commonly connected, and   wherein the adhesive member is interposed between the second portion of each of the first and second light emitting diodes and the insulation layer.   
     
     
         14 . The display device of  claim 13 , wherein the second electrodes of the first and second light emitting diodes are commonly connected to a common electrode of the display device. 
     
     
         15 . The display device of  claim 13 , wherein the first electrodes of the first and second light emitting diodes are commonly connected to a power line of the display device. 
     
     
         16 . The display device of  claim 15 , further comprising a switching transistor, and first and second driving transistors connected to the switching transistor,
 wherein the first electrodes of the first and second light emitting diodes are respectively connected to the first and second driving transistors.   
     
     
         17 . The display device of  claim 13 , wherein a distance between the second electrodes of the first and second light emitting diodes is smaller than a distance between the first electrodes of the first and second light emitting diodes. 
     
     
         18 . The display device of  claim 13 , wherein the planarization layer comprises:
 a first planarization layer on the insulation layer; and   a second planarization layer on the first planarization layer and the first and second light emitting diodes,   wherein the second planarization layer covers the first and second light emitting diodes except for each of the first and second electrodes of the first and second light emitting diodes.   
     
     
         19 . The light emitting diode display device of  claim 1 , wherein the planarization layer covers the at least one light emitting diode device except for each of the first and second electrodes of the at least one light emitting diode device. 
     
     
         20 . The light emitting diode display device of  claim 19 , wherein the planarization layer comprises:
 a first planarization layer on the insulation layer; and   a second planarization layer on the first planarization layer and the at least one light emitting diode device,   wherein the second planarization layer covers the at least one light emitting diode device except for each of the first and second electrodes of the at least one light emitting diode device.   
     
     
       21. The light emitting diode display device of  claim 1 , wherein the at least one or more of the plurality of subpixels further comprises at least one pixel electrode configured to connect the first electrode of the at least one light emitting diode device to an electrode via a contact hole formed through the planarization layer and the adhesive member. 
     
     
       22. The light emitting diode display device of  claim 1 , wherein the at least one light emitting diode device is embedded in the planarization layer. 
     
     
       23. The light emitting diode display device of  claim 1 , further comprising a substrate below the insulation layer, wherein a distance between at least a portion of the first portion and the substrate is greater than a distance between a top surface of the planarization layer and the substrate. 
     
     
       24. The light emitting diode display device of  claim 1 , wherein the planarization layer comprises:
 a first top surface;   a second top surface; and   a first side surface connecting the first top surface and the second top surface, wherein the first side surface is inclined in a first direction,   wherein the at least one light emitting diode device includes a second side surface facing the first side surface and inclined in a second direction, and   wherein one of the first and second directions has a positive slope with respect to the first top surface, and another one of the first and second directions has a negative slope with respect to the first top surface.   
     
     
       25. The light emitting diode display device of  claim 1 , further comprising a reflective layer configured to reflect the light emitted from the at least one light emitting diode device. 
     
     
       26. The light emitting diode display device of  claim 25 , wherein the at least one light emitting diode device overlaps the reflective layer. 
     
     
       27. The light emitting diode display device of  claim 25 , further comprising a black matrix defining an opening of the at least one or more of the plurality of subpixels, wherein the black matrix does not overlap the reflective layer. 
     
     
       28. The light emitting diode display device of  claim 1 , further comprising a black matrix defining an opening of the at least one or more of the plurality of subpixels, wherein the black matrix does not overlap the at least one light emitting diode device. 
     
     
       29. The light emitting diode display device of  claim 25 , wherein the reflective layer includes a material that is the same as the one used for a gate electrode, a source electrode, or a drain electrode of the at least one driving transistor. 
     
     
       30. The light emitting diode display device of  claim 25 , wherein the at least one light emitting diode device comprises a first light emitting diode device and a second light emitting diode device, and
 wherein the reflective layer overlaps both of the first and second light emitting diode devices.   
     
     
       31. The light emitting diode display device of  claim 1 , further comprising an encapsulation layer above the planarization layer. 
     
     
       32. The light emitting diode display device of  claim 31 , wherein the encapsulation layer comprises an optical clear adhesive or an optical clear resin. 
     
     
       33. The light emitting diode display device of  claim 1 , wherein the at least one or more of the plurality of subpixels comprises a first subpixel and a second subpixel, and
 wherein a height of the at least one light emitting diode device of the first subpixel is greater than a height of the at least one light emitting diode device of the second subpixel.   
     
     
       34. The light emitting diode display device of  claim 33 , wherein a color of the light emitted from the first subpixel is different from a color of the light emitted from the second subpixel. 
     
     
       35. The light emitting diode display device of  claim 33 , wherein a wavelength of the light emitted from the first subpixel is greater than a wavelength of the light emitted from the second subpixel. 
     
     
       36. The light emitting diode display device of  claim 1 , further comprising a gate driving circuit disposed in a non-display area and configured to generate a gate signal that is supplied to a gate line,
 wherein the plurality of subpixels are configured to display an image based on the data signal and the gate signal.   
     
     
       37. The light emitting diode display device of  claim 1 , further comprising:
 a gate line extending along a first direction;   a data line extending along a second direction that is different from the first direction; and   a driving power line,   wherein the driving power line extends in parallel with at least one of the gate line and the data line.   
     
     
       38. The light emitting diode display device of  claim 37 , wherein the driving power line comprises:
 a first portion extending in parallel with the gate line; and   a second portion extending in parallel with the data line.   
     
     
       39. The light emitting diode display device of  claim 37 , further comprising a common power line extending in parallel with at least one of the gate line and the data line. 
     
     
       40. The light emitting diode display device of  claim 39 , wherein the common power line comprises:
 a first portion extending in parallel with the gate line; and   a second portion extending in parallel with the data line.   
     
     
       41. The light emitting diode display device of  claim 40 , wherein the first portion of the common power line is connected with the second portion of the common power line via a line contact hole formed through the planarization layer and the insulation layer. 
     
     
       42. The light emitting diode display device of  claim 37 , wherein the at least one or more of the plurality of subpixels are defined by the gate line and the data line. 
     
     
       43. The light emitting diode display device of  claim 1 , wherein the pixel circuit further comprises:
 a switching transistor supplying the data signal, supplied through a data line, to a first node in response to a gate signal; and   a capacitor connected between a gate electrode of the at least one driving transistor and a node between the at least one driving transistor and the at least one light emitting diode device.   
     
     
       44. The light emitting diode display device of  claim 1 , wherein the pixel circuit comprises:
 a switching transistor supplying the data signal, supplied through a data line, to a first node in response to a gate signal; and   a storage capacitor including a first terminal connected to the first node and a second terminal connected to a second node, and   wherein a gate electrode of the at least one driving transistor is connected to the second node.   
     
     
       45. The light emitting diode display device of  claim 44 , wherein the at least one light emitting diode device comprises a first light emitting diode device and a second light emitting diode device, and
 wherein the switching transistor is in electrical communication with the first and second light emitting diode devices.   
     
     
       46. The light emitting diode display device of  claim 44 , wherein the pixel circuit further comprises:
 an emission control transistor connected between the at least one driving transistor and a common power line, and   wherein the emission control transistor includes a gate electrode connected to an emission control line.   
     
     
       47. The light emitting diode display device of  claim 46 , wherein the pixel circuit further comprises:
 a first transistor connected between the second node and a node between the at least one driving transistor and the emission control transistor.   
     
     
       48. The light emitting diode display device of  claim 47 , wherein the first transistor is turned on or turned off in response to a gate signal from a gate line. 
     
     
       49. The light emitting diode display device of  claim 47 , wherein the pixel circuit further comprises:
 a second transistor connected between the first node and a reference power line through which a reference voltage is supplied.   
     
     
       50. The light emitting diode display device of  claim 49 , wherein the second transistor includes a gate electrode connected to the emission control line. 
     
     
       51. The light emitting diode display device of  claim 49 , wherein the pixel circuit further comprises:
 a third transistor connected between the reference power line and a node between the at least one driving transistor and the common power line.   
     
     
       52. The light emitting diode display device of  claim 51 , wherein the third transistor is turned on or turned off in response to a gate signal from a gate line. 
     
     
       53. The light emitting diode display device of  claim 1 , wherein a width of the second portion is greater than a width of the first portion. 
     
     
       54. The light emitting diode display device of  claim 1 , wherein the at least one light emitting diode device is a micro light emitting diode device having a size in a range of 1 μm to 100 μm. 
     
     
       55. A light emitting diode display device comprising:
 a plurality of subpixels, wherein at least one or more of the plurality of subpixels include:   at least one micro light emitting diode device emitting light;   a pixel circuit including at least one driving transistor supplying a data current corresponding to a data signal to the at least one micro light emitting diode device;   an insulation layer covering the pixel circuit;   a planarization layer on the insulation layer; and   an adhesive member between the insulation layer and the at least one micro light emitting diode device,   wherein each of the at least one micro light emitting diode device includes:   a first portion including a first electrode and a second electrode; and   a second portion opposite to the first portion,   wherein the adhesive member is interposed between the second portion of each of the at least one micro light emitting diode device and the insulation layer, and   wherein the at least one micro light emitting diode device has a size in a range of 1 μm to 100 μm.