Assignee
AKIYAMA SHOJI
JP·17 granted patents·7 pending applications·77 citations·filing 2008–2012
Top patents by PatentIndex Score
24 records- 0195US8518612B2Pellicle for lithography and manufacturing method thereofAKIYAMA SHOJI·Filed 2010·Granted Aug 27, 2013·12 cites·20 claims
- 0291US8975159B2Method for manufacturing bonded waferAKIYAMA SHOJI·Filed 2010·Granted Mar 10, 2015·14 cites·11 claims
- 0385US8748294B2SOS substrate with reduced stressAKIYAMA SHOJI·Filed 2010·Granted Jun 10, 2014·8 cites·6 claims
- 0484US8088670B2Method for manufacturing bonded substrate with sandblast treatmentAKIYAMA SHOJI·Filed 2008·Granted Jan 3, 2012·9 cites·24 claims
- 0583US8263478B2Method for manufacturing semiconductor substrateAKIYAMA SHOJI·Filed 2010·Granted Sep 11, 2012·6 cites·2 claims
- 0674US9312166B2Method for manufacturing composite wafersAKIYAMA SHOJI·Filed 2012·Granted Apr 12, 2016·3 cites·10 claims
- 0773US8551862B2Method of manufacturing laminated wafer by high temperature laminating methodAKIYAMA SHOJI·Filed 2010·Granted Oct 8, 2013·3 cites·8 claims
- 0873US8546245B2Method for manufacturing composite substrate comprising wide bandgap semiconductor layerAKIYAMA SHOJI·Filed 2009·Granted Oct 1, 2013·5 cites·20 claims
- 0970US8138064B2Method for producing silicon film-transferred insulator waferAKIYAMA SHOJI·Filed 2009·Granted Mar 20, 2012·3 cites·16 claims
- 1067US8765576B2Process for producing laminated substrate and laminated substrateAKIYAMA SHOJI·Filed 2009·Granted Jul 1, 2014·2 cites·16 claims
- 1167US8288251B2Method for preparing SOI substrate having backside sandblastedAKIYAMA SHOJI·Filed 2010·Granted Oct 16, 2012·2 cites·12 claims
- 1263US8563401B2Method for fabricating SOI substrateAKIYAMA SHOJI·Filed 2009·Granted Oct 22, 2013·2 cites·13 claims
- 1362US8716106B2Method for producing a bonded substrateAKIYAMA SHOJI·Filed 2008·Granted May 6, 2014·2 cites·10 claims
- 1458US8268700B2Method for manufacturing SOI waferAKIYAMA SHOJI·Filed 2008·Granted Sep 18, 2012·1 cites·2 claims
- 1548US9064929B2Method for reducing the thickness of an SOI layerAKIYAMA SHOJI·Filed 2008·Granted Jun 23, 2015·0 cites·4 claims
- 1648US8420503B2Method for producing SOI substrateAKIYAMA SHOJI·Filed 2009·Granted Apr 16, 2013·0 cites·9 claims
- 1748USD673287SMicro flow channel chipAKIYAMA SHOJI·Filed 2010·Granted Dec 25, 2012·5 cites·1 claims
- 1848US2012228730A1Microchip and soi substrate for manufacturing microchipAKIYAMA SHOJI·Filed 2012·Application pending·0 cites
- 1948US2010264424A1GaN LAYER CONTAINING MULTILAYER SUBSTRATE, PROCESS FOR PRODUCING SAME, AND DEVICEAKIYAMA SHOJI·Filed 2008·Application pending·0 cites
- 2047US2011003460A1Method for treating surface of soi substrateAKIYAMA SHOJI·Filed 2009·Application pending·0 cites
- 2145US2012119323A1Sos substrate having low surface defect densityAKIYAMA SHOJI·Filed 2010·Application pending·0 cites
- 2245US2012126362A1Sos substrate having low defect density in the vicinity of interfaceAKIYAMA SHOJI·Filed 2010·Application pending·0 cites
- 2341US2013309842A1Method for manufacturing soi waferAKIYAMA SHOJI·Filed 2012·Application pending·0 cites
- 2441US2012183757A1Pellicle film and a pellicle for euv application, and a method for manufacturing the filmAKIYAMA SHOJI·Filed 2012·Application pending·0 cites
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