Method for manufacturing composite wafers

Abstract

This invention provides a method for manufacturing composite wafers in which at least two composite wafers can be obtained from one donor wafer, and in which the chamfering step can be omitted. Provided is a method for manufacturing composite wafers comprising: bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; heating the bonded wafer at 200° C. to 400° C.; and detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers.

The invention claimed is: 
     
       1. A method for manufacturing composite wafers comprising at least the steps of:
 bonding surfaces of at least two handle wafers and a surface of a donor wafer which has a diameter greater than or equal to a sum of diameters of the at least two handle wafers and which has a hydrogen ion implantation layer formed inside thereof by implanting hydrogen ions from the surface of the donor wafer, to obtain a bonded wafer; 
 heating the bonded wafer at 200° C. to 400° C.; and 
 detaching a film from the donor wafer along the hydrogen ion implantation layer of the heated bonded wafer, to obtain the composite wafers having the film transferred onto the at least two handle wafers, 
 wherein the diameter of the donor wafer is 4 inches to 12 inches, and the diameter of each of the at least two handle wafers is 2 inches to 6 inches. 
 
     
     
       2. The method for manufacturing composite wafers according to  claim 1 , wherein the diameter of the donor wafer is 6 inches to 12 inches, and each of the diameters of the at least two handle wafers is 2 inches to 6 inches. 
     
     
       3. The method for manufacturing composite wafers according to  claim 1 , wherein the surface of the donor wafer and/or the surfaces of the at least two handle wafers have been subjected to a surface activation treatment. 
     
     
       4. The method for manufacturing composite wafers according to  claim 1 , wherein each of the donor wafer and the at least two handle wafers is selected from the group consisting of a silicon wafer, a silicon wafer having an oxide film formed thereon, a glass wafer, a quartz wafer, a sapphire wafer, a silicon carbide wafer, and a gallium nitride wafer. 
     
     
       5. The method for manufacturing composite wafers according to  claim 4 , wherein the donor wafer is a silicon wafer or a silicon wafer having an oxide film formed thereon, and each of the at least two handle wafers is a glass wafer, a quartz wafer, or a sapphire wafer. 
     
     
       6. The method for manufacturing composite wafers according to  claim 1 , wherein the donor wafer and/or the at least two handle wafers are transparent, and the step of detaching comprises irradiating visible light through a transparent side of the bonded wafer. 
     
     
       7. The method for manufacturing composite wafers according to  claim 6 , wherein a light source of the visible light is a light source of a rapid thermal annealer, a laser, or flash lamp light. 
     
     
       8. The method for manufacturing composite wafers according to  claim 1 , wherein each of the at least two handle wafers is a glass wafer, a quartz wafer, or a sapphire wafer, and the step of detaching comprises irradiating visible light through an at least two handle wafer side of the bonded wafer. 
     
     
       9. The method for manufacturing composite wafers according to  claim 1 , wherein each of the at least two handle wafers is a glass wafer, a quartz wafer, or a sapphire wafer, and the step of detaching comprises applying a mechanical impact to the hydrogen ion implantation layer of the bonded wafer. 
     
     
       10. The method for manufacturing composite wafers according to  claim 1 , wherein each of the at least two handle wafers is a glass wafer, a quartz wafer, or a sapphire wafer, and the step of detaching comprises applying a mechanical impact to the hydrogen ion implantation layer with a cleavage member attached while irradiating visible light through an at least two handle wafer side of the bonded wafer.