Assignee
BOUR DAVID P
US·11 granted patents·3 pending applications·43 citations·filing 2004–2012
Top patents by PatentIndex Score
14 records- 0194US8470619B2Selective decomposition of nitride semiconductors to enhance LED light extractionBOUR DAVID P·Filed 2010·Granted Jun 25, 2013·18 cites·20 claims
- 0288US8569153B2Method and system for carbon doping control in gallium nitride based devicesBOUR DAVID P·Filed 2011·Granted Oct 29, 2013·7 cites·21 claims
- 0381US9076827B2Transfer chamber metrology for improved device yieldBOUR DAVID P·Filed 2011·Granted Jul 7, 2015·4 cites·15 claims
- 0476US9136116B2Method and system for formation of P-N junctions in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Sep 15, 2015·3 cites·15 claims
- 0573US8124993B2Selective decomposition of nitride semiconductors to enhance LED light extractionBOUR DAVID P·Filed 2008·Granted Feb 28, 2012·3 cites·12 claims
- 0672US9093395B2Method and system for local control of defect density in gallium nitride based electronicsBOUR DAVID P·Filed 2011·Granted Jul 28, 2015·2 cites·23 claims
- 0772US8571817B2Integrated vapor delivery systems for chemical vapor deposition precursorsBOUR DAVID P·Filed 2008·Granted Oct 29, 2013·1 cites·19 claims
- 0866US9123533B2Method and system for in-situ etch and regrowth in gallium nitride based devicesBOUR DAVID P·Filed 2012·Granted Sep 1, 2015·1 cites·13 claims
- 0963US9127364B2Reactor cleanBOUR DAVID P·Filed 2010·Granted Sep 8, 2015·1 cites·8 claims
- 1053US7033938B2Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active regionBOUR DAVID P·Filed 2004·Granted Apr 25, 2006·3 cites·22 claims
- 1149US2007241322A1Long Wavelength Induim Arsenide Phosphide (InAsP) Quantum Well Active Region And Method For Producing SameBOUR DAVID P·Filed 2007·Application pending·0 cites
- 1248US8846482B2Method and system for diffusion and implantation in gallium nitride based devicesBOUR DAVID P·Filed 2011·Granted Sep 30, 2014·0 cites·18 claims
- 1341US2007030870A1Method and structure for ridge waveguide quantum cascade laser with p-type overgrowthBOUR DAVID P·Filed 2005·Application pending·0 cites
- 1441US2006284163A1Single ELOG growth transverse p-n junction nitride semiconductor laserBOUR DAVID P·Filed 2005·Application pending·0 cites
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →