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CAPPELLANI ANNALISA

US11 patents

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US8313999B2Nov 20, 2012

Multi-gate semiconductor device with self-aligned epitaxial source and drain

CAPPELLANI ANNALISA70 citations97
US9608059B2Mar 28, 2017

Semiconductor device with isolated body portion

CAPPELLANI ANNALISA18 citations92
US8735869B2May 27, 2014

Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates

CAPPELLANI ANNALISA22 citations92
US9484272B2Nov 1, 2016

Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layer

CAPPELLANI ANNALISA4 citations84
US9129827B2Sep 8, 2015

Conversion of strain-inducing buffer to electrical insulator

CAPPELLANI ANNALISA12 citations84
US9041106B2May 26, 2015

Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates

CAPPELLANI ANNALISA9 citations82
US10424580B2Sep 24, 2019

Semiconductor devices having modulated nanowire counts

CAPPELLANI ANNALISA6 citations73
US9559160B2Jan 31, 2017

Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition

CAPPELLANI ANNALISA5 citations73
US9425212B2Aug 23, 2016

Isolated and bulk semiconductor devices formed on a same bulk substrate

CAPPELLANI ANNALISA3 citations73
US9029221B2May 12, 2015

Semiconductor devices having three-dimensional bodies with modulated heights

CAPPELLANI ANNALISA4 citations70
US8507948B2Aug 13, 2013

Junctionless accumulation-mode devices on prominent architectures, and methods of making same

CAPPELLANI ANNALISA3 citations59