Individual holder
CHANG JOSEPHINE B
US·57 granted patents·6 pending applications·668 citations·filing 2009–2012
Individually held — no corporate assignee on record.
Top patents by PatentIndex Score
63 records- 0199US8637359B2Fin-last replacement metal gate FinFET processCHANG JOSEPHINE B·Filed 2011·Granted Jan 28, 2014·71 cites·17 claims
- 0298US8669615B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·47 cites·15 claims
- 0398US8536029B1Nanowire FET and finFETCHANG JOSEPHINE B·Filed 2012·Granted Sep 17, 2013·48 cites·20 claims
- 0497US8722472B2Hybrid CMOS nanowire mesh device and FINFET deviceCHANG JOSEPHINE B·Filed 2011·Granted May 13, 2014·40 cites·12 claims
- 0597US8658518B1Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devicesCHANG JOSEPHINE B·Filed 2012·Granted Feb 25, 2014·29 cites·20 claims
- 0697US8551833B2Double gate planar field effect transistorsCHANG JOSEPHINE B·Filed 2011·Granted Oct 8, 2013·32 cites·17 claims
- 0797US8466012B1Bulk FinFET and SOI FinFET hybrid technologyCHANG JOSEPHINE B·Filed 2012·Granted Jun 18, 2013·40 cites·21 claims
- 0895US8816328B2Patterning contacts in carbon nanotube devicesCHANG JOSEPHINE B·Filed 2012·Granted Aug 26, 2014·13 cites·14 claims
- 0995US8709888B2Hybrid CMOS nanowire mesh device and PDSOI deviceCHANG JOSEPHINE B·Filed 2011·Granted Apr 29, 2014·23 cites·11 claims
- 1095US8673731B2Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 18, 2014·19 cites·19 claims
- 1195US8669167B1Techniques for metal gate workfunction engineering to enable multiple threshold voltage FINFET devicesCHANG JOSEPHINE B·Filed 2012·Granted Mar 11, 2014·19 cites·19 claims
- 1295US8586449B1Raised isolation structure self-aligned to fin structuresCHANG JOSEPHINE B·Filed 2012·Granted Nov 19, 2013·23 cites·22 claims
- 1394US8878298B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2012·Granted Nov 4, 2014·17 cites·16 claims
- 1494US8803129B2Patterning contacts in carbon nanotube devicesCHANG JOSEPHINE B·Filed 2011·Granted Aug 12, 2014·12 cites·16 claims
- 1594US8110467B2Multiple Vt field-effect transistor devicesCHANG JOSEPHINE B·Filed 2009·Granted Feb 7, 2012·24 cites·11 claims
- 1693US8659084B1Techniques for gate workfunction engineering to reduce short channel effects in planar CMOS devicesCHANG JOSEPHINE B·Filed 2012·Granted Feb 25, 2014·14 cites·14 claims
- 1793US8178400B2Replacement spacer for tunnel FETsCHANG JOSEPHINE B·Filed 2009·Granted May 15, 2012·21 cites·16 claims
- 1893US8138030B2Asymmetric finFET device with improved parasitic resistance and capacitanceCHANG JOSEPHINE B·Filed 2009·Granted Mar 20, 2012·21 cites·11 claims
- 1992US8513099B2Epitaxial source/drain contacts self-aligned to gates for deposited FET channelsCHANG JOSEPHINE B·Filed 2010·Granted Aug 20, 2013·10 cites·11 claims
- 2091US8741722B2Formation of dividers between gate ends of field effect transistor devicesCHANG JOSEPHINE B·Filed 2012·Granted Jun 3, 2014·11 cites·14 claims
- 2191US8592280B2Fin field effect transistor devices with self-aligned source and drain regionsCHANG JOSEPHINE B·Filed 2009·Granted Nov 26, 2013·15 cites·10 claims
- 2291US8513127B2Chemical mechanical planarization processes for fabrication of FinFET devicesCHANG JOSEPHINE B·Filed 2011·Granted Aug 20, 2013·10 cites·20 claims
- 2390US8816327B2Nanowire efusesCHANG JOSEPHINE B·Filed 2012·Granted Aug 26, 2014·10 cites·1 claims
- 2489US8637371B2Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the sameCHANG JOSEPHINE B·Filed 2012·Granted Jan 28, 2014·11 cites·10 claims
- 2589US8492748B2Collapsable gate for deposited nanostructuresCHANG JOSEPHINE B·Filed 2011·Granted Jul 23, 2013·10 cites·11 claims
- 2688US8823064B2Asymmetric FET formed through use of variable pitch gate for use as logic device and test structureCHANG JOSEPHINE B·Filed 2012·Granted Sep 2, 2014·7 cites·20 claims
- 2788US8659006B1Techniques for metal gate work function engineering to enable multiple threshold voltage nanowire FET devicesCHANG JOSEPHINE B·Filed 2012·Granted Feb 25, 2014·9 cites·18 claims
- 2888US8288236B2Field effect transistor having nanostructure channelCHANG JOSEPHINE B·Filed 2012·Granted Oct 16, 2012·8 cites·12 claims
- 2987US8618636B1Fin bipolar transistors having self-aligned collector and emitter regionsCHANG JOSEPHINE B·Filed 2012·Granted Dec 31, 2013·7 cites·18 claims
- 3086US8946782B2Method for keyhole repair in replacement metal gate integration through the use of a printable dielectricCHANG JOSEPHINE B·Filed 2012·Granted Feb 3, 2015·6 cites·3 claims
- 3184US9368502B2Replacement gate multigate transistor for embedded DRAMCHANG JOSEPHINE B·Filed 2011·Granted Jun 14, 2016·6 cites·7 claims
- 3284US8409957B2Graphene devices and silicon field effect transistors in 3D hybrid integrated circuitsCHANG JOSEPHINE B·Filed 2011·Granted Apr 2, 2013·5 cites·20 claims
- 3381US9024355B2Embedded planar source/drain stressors for a finFET including a plurality of finsCHANG JOSEPHINE B·Filed 2012·Granted May 5, 2015·5 cites·20 claims
- 3476US8530932B2Replacement spacer for tunnel FETSCHANG JOSEPHINE B·Filed 2012·Granted Sep 10, 2013·3 cites·20 claims
- 3576US8242485B2Source/drain technology for the carbon nano-tube/graphene CMOS with a single self-aligned metal silicide processCHANG JOSEPHINE B·Filed 2010·Granted Aug 14, 2012·4 cites·23 claims
- 3675US8617957B1Fin bipolar transistors having self-aligned collector and emitter regionsCHANG JOSEPHINE B·Filed 2012·Granted Dec 31, 2013·3 cites·16 claims
- 3773US8587067B2Graphene devices and silicon field effect transistors in 3D hybrid integrated circuitsCHANG JOSEPHINE B·Filed 2012·Granted Nov 19, 2013·2 cites·16 claims
- 3871US8563376B2Hybrid CMOS nanowire mesh device and bulk CMOS deviceCHANG JOSEPHINE B·Filed 2011·Granted Oct 22, 2013·3 cites·19 claims
- 3970US8765613B2High selectivity nitride etch processCHANG JOSEPHINE B·Filed 2011·Granted Jul 1, 2014·2 cites·5 claims
- 4068US8884370B2Narrow body field-effect transistor structures with free-standing extension regionsCHANG JOSEPHINE B·Filed 2012·Granted Nov 11, 2014·2 cites·9 claims
- 4168US8404539B2Self-aligned contacts in carbon devicesCHANG JOSEPHINE B·Filed 2010·Granted Mar 26, 2013·2 cites·13 claims
- 4266US9214529B2Fin Fet device with independent control gateCHANG JOSEPHINE B·Filed 2011·Granted Dec 15, 2015·2 cites·17 claims
- 4363US9006810B2DRAM with a nanowire access transistorCHANG JOSEPHINE B·Filed 2012·Granted Apr 14, 2015·1 cites·18 claims
- 4463US8981478B2Recessed source and drain regions for FinFETsCHANG JOSEPHINE B·Filed 2012·Granted Mar 17, 2015·1 cites·18 claims
- 4559US8754403B2Epitaxial source/drain contacts self-aligned to gates for deposited FET channelsCHANG JOSEPHINE B·Filed 2012·Granted Jun 17, 2014·0 cites·11 claims
- 4652US8536651B2Multi-gate transistor having sidewall contactsCHANG JOSEPHINE B·Filed 2012·Granted Sep 17, 2013·0 cites·13 claims
- 4752US8455862B2Self-aligned contacts in carbon devicesCHANG JOSEPHINE B·Filed 2012·Granted Jun 4, 2013·0 cites·20 claims
- 4851US9000556B2Lateral etch stop for NEMS release etch for high density NEMS/CMOS monolithic integrationCHANG JOSEPHINE B·Filed 2011·Granted Apr 7, 2015·0 cites·22 claims
- 4950US8822278B2Asymmetric FET formed through use of variable pitch gate for use as logic device and test structureCHANG JOSEPHINE B·Filed 2012·Granted Sep 2, 2014·0 cites·20 claims
- 5050US8557648B2Recessed source and drain regions for FinFETsCHANG JOSEPHINE B·Filed 2012·Granted Oct 15, 2013·0 cites·10 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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