Assignee
CHENG PO-LUN
TW·4 granted patents·2 pending applications·8 citations·filing 2005–2012
Top patents by PatentIndex Score
6 records- 0173US8288802B2Spacer structure wherein carbon-containing oxynitride film formed withinCHENG PO-LUN·Filed 2006·Granted Oct 16, 2012·5 cites·17 claims
- 0259US8106466B2MOS transistor and method for fabricating the sameCHENG PO-LUN·Filed 2008·Granted Jan 31, 2012·2 cites·9 claims
- 0357US8716092B2Method for fabricating MOS transistorsCHENG PO-LUN·Filed 2011·Granted May 6, 2014·1 cites·13 claims
- 0449US8415723B2Spacer structure wherein carbon-containing oxide film formed withinCHENG PO-LUN·Filed 2012·Granted Apr 9, 2013·0 cites·20 claims
- 0542US2006226500A1Gate dielectric layer and method of forming the sameCHENG PO-LUN·Filed 2005·Application pending·0 cites
- 0639US2006172473A1Method of forming a two-layer gate dielectricCHENG PO-LUN·Filed 2005·Application pending·0 cites
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