Assignee
IIZUKA TOSHIHIRO
JP·3 granted patents·1 pending application·7 citations·filing 2002–2012
Top patents by PatentIndex Score
4 records- 0170US8815678B2Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)IIZUKA TOSHIHIRO·Filed 2007·Granted Aug 26, 2014·2 cites·18 claims
- 0269US8169013B2Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1)IIZUKA TOSHIHIRO·Filed 2006·Granted May 1, 2012·2 cites·10 claims
- 0354US8212299B2Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structureIIZUKA TOSHIHIRO·Filed 2002·Granted Jul 3, 2012·3 cites·22 claims
- 0453US2012261735A1Semiconductor device having a thin film capacitor and method for fabricating the sameIIZUKA TOSHIHIRO·Filed 2012·Application pending·0 cites
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