Assignee
INST OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE
CN·1 granted patent·1 pending application·5 citations·filing 2011–2015
Top patents by PatentIndex Score
2 records- 0177US10192963B2Composite gate dielectric layer applied to group III-V substrate and method for manufacturing the sameINST OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE·Filed 2015·Granted Jan 29, 2019·5 cites·13 claims
- 0234US2013037821A1Semiconductor Device and Manufacturing Method thereofINST OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE·Filed 2011·Application pending·0 cites
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