Assignee
INTELLIGENT SOURCES DEV CORP
TW·10 granted patents·236 citations·filing 2002–2002
Top patents by PatentIndex Score
10 records- 0190US6750499B2Self-aligned trench-type dram structure and its contactless dram arraysINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Jun 15, 2004·59 cites·18 claims
- 0290US6552382B1Scalable vertical DRAM cell structure and its manufacturing methodsINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Apr 22, 2003·46 cites·12 claims
- 0384US6765258B1Stack-gate flash memory cell structure and its contactless flash memory arraysINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Jul 20, 2004·35 cites·20 claims
- 0479US6756631B2Stacked-gate cell structure and its NAND-type flash memory arrayINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Jun 29, 2004·25 cites·13 claims
- 0578US6700150B1Self-aligned vertical transistor DRAM structureINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Mar 2, 2004·24 cites·14 claims
- 0673US6744089B2Self-aligned lateral-transistor DRAM cell structureINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Jun 1, 2004·19 cites·12 claims
- 0762US6747328B2Scaled MOSFET device and its fabricating methodINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Jun 8, 2004·10 cites·7 claims
- 0861US6746915B2Stack-type DRAM memory structure and its manufacturing methodINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Jun 8, 2004·10 cites·20 claims
- 0949US6713393B2Method of forming a nanometer-gate MOSFET deviceINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Mar 30, 2004·4 cites·20 claims
- 1049US6710398B2Scalable stack-type DRAM memory structure and its manufacturing methodsINTELLIGENT SOURCES DEV CORP·Filed 2002·Granted Mar 23, 2004·4 cites·16 claims
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