Assignee
KAMMLER THORSTEN
DE4 patents
Top patents by PatentIndex Score
US8481404B2Jul 9, 2013
Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge
KAMMLER THORSTEN4 citations61
US8198166B2Jun 12, 2012
Using high-k dielectrics as highly selective etch stop materials in semiconductor devices
KAMMLER THORSTEN3 citations61
US8906811B2Dec 9, 2014
Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process
KAMMLER THORSTEN1 citations49
US8569143B2Oct 29, 2013
Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI)
KAMMLER THORSTEN0 citations49