Assignee
KILOPASS TECHNOLOGIES INC
US·16 granted patents·1,491 citations·filing 2001–2004
Top patents by PatentIndex Score
16 records- 0198US6992925B2High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordlineKILOPASS TECHNOLOGIES INC·Filed 2004·Granted Jan 31, 2006·357 cites·7 claims
- 0297US6667902B2Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2001·Granted Dec 23, 2003·169 cites·13 claims
- 0395US6700151B2Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2001·Granted Mar 2, 2004·107 cites·16 claims
- 0495US6671040B2Programming methods and circuits for semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2002·Granted Dec 30, 2003·112 cites·24 claims
- 0594US6777757B2High density semiconductor memory cell and memory array using a single transistorKILOPASS TECHNOLOGIES INC·Filed 2002·Granted Aug 17, 2004·101 cites·14 claims
- 0693US6822888B2Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2003·Granted Nov 23, 2004·72 cites·11 claims
- 0793US6650143B1Field programmable gate array based upon transistor gate oxide breakdownKILOPASS TECHNOLOGIES INC·Filed 2002·Granted Nov 18, 2003·88 cites·16 claims
- 0892US6972986B2Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdownKILOPASS TECHNOLOGIES INC·Filed 2004·Granted Dec 6, 2005·79 cites·18 claims
- 0992US6940751B2High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdownKILOPASS TECHNOLOGIES INC·Filed 2004·Granted Sep 6, 2005·79 cites·14 claims
- 1092US6898116B2High density semiconductor memory cell and memory array using a single transistor having a buried N+ connectionKILOPASS TECHNOLOGIES INC·Filed 2003·Granted May 24, 2005·68 cites·15 claims
- 1192US6798693B2Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2001·Granted Sep 28, 2004·61 cites·9 claims
- 1290US6956258B2Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2002·Granted Oct 18, 2005·53 cites·16 claims
- 1390US6856540B2High density semiconductor memory cell and memory array using a single transistorKILOPASS TECHNOLOGIES INC·Filed 2003·Granted Feb 15, 2005·52 cites·11 claims
- 1488US6791891B1Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltageKILOPASS TECHNOLOGIES INC·Filed 2003·Granted Sep 14, 2004·51 cites·14 claims
- 1586US6766960B2Smart card having memory using a breakdown phenomena in an ultra-thin dielectricKILOPASS TECHNOLOGIES INC·Filed 2001·Granted Jul 27, 2004·34 cites·16 claims
- 1662US6924664B2Field programmable gate arrayKILOPASS TECHNOLOGIES INC·Filed 2003·Granted Aug 2, 2005·8 cites·12 claims
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