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KRYLIOUK OLGA

US6 patents

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US8507304B2Aug 13, 2013

Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

KRYLIOUK OLGA15 citations82
US8268646B2Sep 18, 2012

Group III-nitrides on SI substrates using a nanostructured interlayer

KRYLIOUK OLGA7 citations80
US8110889B2Feb 7, 2012

MOCVD single chamber split process for LED manufacturing

KRYLIOUK OLGA2 citations62
US9431477B2Aug 30, 2016

Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)

KRYLIOUK OLGA1 citations51
US8222057B2Jul 17, 2012

Crack free multilayered devices, methods of manufacture thereof and articles comprising the same

KRYLIOUK OLGA0 citations51
US8946674B2Feb 3, 2015

Group III-nitrides on Si substrates using a nanostructured interlayer

KRYLIOUK OLGA0 citations48