Mocvd single chamber split process for led manufacturing

Abstract

In one embodiment an integrated processing system for manufacturing compound nitride semiconductor devices comprising a metal organic chemical vapor deposition (MOCVD) chamber operable to form a gallium nitride (GaN) layer over one or more substrates with a thermal chemical-vapor-deposition process and to form a multi-quantum well (MQW) layer over the GaN layer, and a halogen containing gas source coupled with the MOCVD chamber operable for flowing a halogen containing gas into the MOCVD chamber to remove at least a portion of unwanted deposition build-up deposited when forming the GaN layer over the one or more substrate from one or more interior surfaces of the MOCVD chamber prior to forming the MQW layer over the GaN layer, wherein the halogen containing gas is selected from the group comprising fluorine, chlorine, bromine, iodine, HI gas, HCl gas, HBr gas, HF gas, NF3, and combinations thereof is provided.

1 . An integrated processing system for manufacturing compound nitride semiconductor devices comprising:
 a metal organic chemical vapor deposition (MOCVD) chamber operable to form a gallium nitride (GaN) layer over one or more substrates with a thermal chemical-vapor-deposition process and to form a multi-quantum well (MQW) layer over the GaN layer; and   a halogen containing gas source coupled with the MOCVD chamber operable for flowing a halogen containing gas into the MOCVD chamber to remove at least a portion of unwanted deposition build-up deposited when forming the GaN layer over the one or more substrate from one or more interior surfaces of the MOCVD chamber prior to forming the MQW layer over the GaN layer, wherein the halogen containing gas is selected from the group comprising fluorine, chlorine, bromine, iodine, HI gas, HCl gas, HBr gas, HF gas, NF 3 , and combinations thereof.   
     
     
         2 . The integrated processing system of  claim 1 , further comprising:
 a purge gas source coupled with the MOCVD chamber operable for flowing purge gas into the MOCVD chamber to remove reaction by-products formed from the reaction of the halogen containing gas with the unwanted deposition build-up from the MOCVD chamber prior to forming the MQW layer over the GaN layer.   
     
     
         3 . The integrated processing system of  claim 1 , further comprising:
 a transfer region in transferable communication with the MOCVD chamber;   a robot assembly disposed in the transfer region for transferring the one or more substrates without exposing the one or more substrates to atmosphere;   a loadlock chamber in transferable communication with the transfer region, wherein transferring one or more substrates comprises transferring the one or more substrates from the MOCVD chamber to a loadlock chamber without exposing the substrate to atmosphere in an environment having greater than 90% N 2 .