Inventor · disambiguated record
Olga Kryliouk
Also filed as: KRYLIOUK OLGA
26 granted patents·24 pending applications·487 citations·filing 1999–2021
96Inventor score
Top patents by PatentIndex Score
50 records- 0196US6218280B1Method and apparatus for producing group-III nitridesUNIV FLORIDA·Filed 1999·Granted Apr 17, 2001·211 cites·29 claims
- 0295US6350666B2Method and apparatus for producing group-III nitridesUNIV FLORIDA·Filed 2000·Granted Feb 26, 2002·94 cites·6 claims
- 0392US8507304B2Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)KRYLIOUK OLGA·Filed 2010·Granted Aug 13, 2013·15 cites·27 claims
- 0490US9444007B2Nanopyramid sized opto-electronic structure and method for manufacturing of sameGLO AB·Filed 2014·Granted Sep 13, 2016·13 cites·10 claims
- 0588US9932670B2Method of decontamination of process chamber after in-situ chamber cleanAPPLIED MATERIALS INC·Filed 2014·Granted Apr 3, 2018·7 cites·7 claims
- 0688US9035278B2Coalesced nanowire structures with interstitial voids and method for manufacturing the sameGLO AB·Filed 2012·Granted May 19, 2015·8 cites·4 claims
- 0788US8080466B2Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing systemSU JIE·Filed 2010·Granted Dec 20, 2011·9 cites·16 claims
- 0886US9196795B2Formation of group III-V material layers on patterned substratesSU JIE·Filed 2014·Granted Nov 24, 2015·6 cites·5 claims
- 0986US8183132B2Methods for fabricating group III nitride structures with a cluster toolNIJHAWAN SANDEEP·Filed 2010·Granted May 22, 2012·12 cites·23 claims
- 1085US9570651B2Coalesced nanowire structures with interstitial voids and method for manufacturing the sameGLO AB·Filed 2015·Granted Feb 14, 2017·4 cites·6 claims
- 1185US8921141B2Nanopyramid sized opto-electronic structure and method for manufacturing of sameGLO AB·Filed 2013·Granted Dec 30, 2014·7 cites·29 claims
- 1285US7001791B2GaN growth on Si using ZnO buffer layerUNIV FLORIDA·Filed 2003·Granted Feb 21, 2006·37 cites·8 claims
- 1384US8491720B2HVPE precursor source hardwareISHIKAWA TETSUYA·Filed 2009·Granted Jul 23, 2013·4 cites·20 claims
- 1483US8568529B2HVPE chamber hardwareISHIKAWA TETSUYA·Filed 2009·Granted Oct 29, 2013·4 cites·11 claims
- 1579US8268646B2Group III-nitrides on SI substrates using a nanostructured interlayerKRYLIOUK OLGA·Filed 2008·Granted Sep 18, 2012·7 cites·15 claims
- 1679US6967355B2Group III-nitride on Si using epitaxial BP buffer layerUNIV FLORIDA·Filed 2003·Granted Nov 22, 2005·23 cites·15 claims
- 1778US8716049B2Growth of group III-V material layers by spatially confined epitaxySU JIE·Filed 2011·Granted May 6, 2014·4 cites·20 claims
- 1875US8138069B2Substrate pretreatment for subsequent high temperature group III depositionsMELNIK YURIY·Filed 2010·Granted Mar 20, 2012·3 cites·19 claims
- 1972US6906351B2Group III-nitride growth on Si substrate using oxynitride interlayerUNIV FLORIDA·Filed 2003·Granted Jun 14, 2005·14 cites·7 claims
- 2069US8110889B2MOCVD single chamber split process for LED manufacturingKRYLIOUK OLGA·Filed 2010·Granted Feb 7, 2012·2 cites·17 claims
- 2165US9431477B2Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)KRYLIOUK OLGA·Filed 2013·Granted Aug 30, 2016·1 cites·16 claims
- 2264US8765501B2Formation of group III-V material layers on patterned substratesSU JIE·Filed 2011·Granted Jul 1, 2014·1 cites·5 claims
- 2356US2009149008A1Method for depositing group iii/v compoundsAPPLIED MATERIALS INC·Filed 2008·Application pending·0 cites
- 2453US2017170261A1Coalesced nanowire structures with interstitial voids and method for manufacturing the sameGLO AB·Filed 2017·Application pending·0 cites
- 2552US2010215854A1Hvpe showerhead designBURROWS BRIAN H·Filed 2010·Application pending·0 cites
- 2650US2008314317A1Showerhead design with precursor pre-mixingBURROWS BRIAN H·Filed 2007·Application pending·0 cites
- 2749US8946674B2Group III-nitrides on Si substrates using a nanostructured interlayerKRYLIOUK OLGA·Filed 2006·Granted Feb 3, 2015·0 cites·12 claims
- 2848US2011117728A1Method of decontamination of process chamber after in-situ chamber cleanAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 2947US2024105890A1Optoelectronic device with axial-type three-dimensional light-emitting diodesAledia·Filed 2021·Application pending·0 cites
- 3047US2011076400A1Nanocrystalline diamond-structured carbon coating of silicon carbideAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 3147US2012111272A1Mocvd single chamber split process for led manufacturingKRYLIOUK OLGA·Filed 2012·Application pending·0 cites
- 3247US2012156863A1Substrate pretreatment for subsequent high temperature group iii depositionsMELNIK YURIY·Filed 2012·Application pending·0 cites
- 3347US2008314311A1Hvpe showerhead designBURROWS BRIAN H·Filed 2007·Application pending·0 cites
- 3446US2011030615A1Method and apparatus for dry cleaning a cooled showerheadAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 3545US8148241B2Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy filmsSU JIE·Filed 2010·Granted Apr 3, 2012·0 cites·8 claims
- 3645US2011079251A1Method for in-situ cleaning of deposition systemsKRYLIOUK OLGA·Filed 2010·Application pending·0 cites
- 3745US2009136652A1Showerhead design with precursor sourceAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 3844US2010279020A1METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPEAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 3944US2022205085A1Deposition process using additional chloride-based precursorsAledia·Filed 2020·Application pending·0 cites
- 4043US2024063191A1Optoelectronic device with axial-type three-dimensional light-emitting diodesAledia·Filed 2021·Application pending·0 cites
- 4141US8222057B2Crack free multilayered devices, methods of manufacture thereof and articles comprising the sameKRYLIOUK OLGA·Filed 2010·Granted Jul 17, 2012·0 cites·19 claims
- 4241US2011140071A1Nano-spherical group iii-nitride materialsKRYLIOUK OLGA·Filed 2010·Application pending·0 cites
- 4340US2012235116A1Light emitting diode with enhanced quantum efficiency and method of fabricationSU JIE·Filed 2010·Application pending·0 cites
- 4438US2012258581A1Mocvd fabrication of group iii-nitride materials using in-situ generated hydrazine or fragments there fromBROWN KARL·Filed 2012·Application pending·0 cites
- 4538US2022205133A1Enhanced doping using alloy based sourcesAledia·Filed 2020·Application pending·0 cites
- 4638US2012258580A1Plasma-assisted mocvd fabrication of p-type group iii-nitride materialsBROWN KARL·Filed 2012·Application pending·0 cites
- 4737US2011171758A1Reclamation of scrap materials for led manufacturingAPPLIED MATERIALS INC·Filed 2011·Application pending·0 cites
- 4837US2011027973A1Method of forming led structuresAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 4936US2011263111A1Group iii-nitride n-type dopingMELNIK YURIY·Filed 2011·Application pending·0 cites
- 5033USD664172SDome assembly for a deposition chamberISHIKAWA TETSUYA·Filed 2009·Granted Jul 24, 2012·1 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →