Assignee
OVONYX INC
US205 patents
Top patents by PatentIndex Score
US7154774B2Dec 26, 2006
Detecting switching of access elements of phase change memory cells
OVONYX INC137 citations99
US6972430B2Dec 6, 2005
Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
OVONYX INC158 citations99
US6969866B1Nov 29, 2005
Electrically programmable memory element with improved contacts
OVONYX INC196 citations99
US6943365B2Sep 13, 2005
Electrically programmable memory element with reduced area of contact and method for making same
OVONYX INC145 citations99
US6933516B2Aug 23, 2005
Forming tapered lower electrode phase-change memories
OVONYX INC279 citations99
US6800563B2Oct 5, 2004
Forming tapered lower electrode phase-change memories
OVONYX INC226 citations99
US6750079B2Jun 15, 2004
Method for making programmable resistance memory element
OVONYX INC202 citations99
US6696355B2Feb 24, 2004
Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory
OVONYX INC344 citations99
US6687153B2Feb 3, 2004
Programming a phase-change material memory
OVONYX INC382 citations99
US6673700B2Jan 6, 2004
Reduced area intersection between electrode and programming element
OVONYX INC648 citations99
US6667900B2Dec 23, 2003
Method and apparatus to operate a memory cell
OVONYX INC277 citations99
US6646297B2Nov 11, 2003
Lower electrode isolation in a double-wide trench
OVONYX INC192 citations99
US6621095B2Sep 16, 2003
Method to enhance performance of thermal resistor device
OVONYX INC480 citations99
US6617192B1Sep 9, 2003
Electrically programmable memory element with multi-regioned contact
OVONYX INC345 citations99
US6593176B2Jul 15, 2003
Method for forming phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
OVONYX INC532 citations99
US6570784B2May 27, 2003
Programming a phase-change material memory
OVONYX INC402 citations99
US6566700B2May 20, 2003
Carbon-containing interfacial layer for phase-change memory
OVONYX INC706 citations99
US6567293B1May 20, 2003
Single level metal memory cell using chalcogenide cladding
OVONYX INC645 citations99
US6545907B1Apr 8, 2003
Technique and apparatus for performing write operations to a phase change material memory device
OVONYX INC358 citations99
US6534781B2Mar 18, 2003
Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
OVONYX INC684 citations99
US6531373B2Mar 11, 2003
Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements
OVONYX INC364 citations99
US6511867B2Jan 28, 2003
Utilizing atomic layer deposition for programmable device
OVONYX INC692 citations99
US6511862B2Jan 28, 2003
Modified contact for programmable devices
OVONYX INC384 citations99
US6487113B1Nov 26, 2002
Programming a phase-change memory with slow quench time
OVONYX INC349 citations99
US6480438B1Nov 12, 2002
Providing equal cell programming conditions across a large and high density array of phase-change memory cells
OVONYX INC277 citations99
US6314014B1Nov 6, 2001
Programmable resistance memory arrays with reference cells
OVONYX INC513 citations99
US7839674B2Nov 23, 2010
Programmable matrix array with chalcogenide material
OVONYX INC51 citations98
US7838341B2Nov 23, 2010
Self-aligned memory cells and method for forming
OVONYX INC52 citations98
US7833823B2Nov 16, 2010
Programmable resistance memory element and method for making same
OVONYX INC77 citations98
US7706178B2Apr 27, 2010
Programmable matrix array with phase-change material
OVONYX INC53 citations98
US7646630B2Jan 12, 2010
Programmable matrix array with chalcogenide material
OVONYX INC63 citations98
US7590918B2Sep 15, 2009
Using a phase change memory as a high volume memory
OVONYX INC67 citations98
US7388775B2Jun 17, 2008
Detecting switching of access elements of phase change memory cells
OVONYX INC98 citations98
US7253429B2Aug 7, 2007
Electrically programmable memory element
OVONYX INC83 citations98
US7050328B2May 23, 2006
Phase change memory device
OVONYX INC91 citations98
US7023009B2Apr 4, 2006
Electrically programmable memory element with improved contacts
OVONYX INC259 citations98
US6972428B2Dec 6, 2005
Programmable resistance memory element
OVONYX INC133 citations98
US6961258B2Nov 1, 2005
Pore structure for programmable device
OVONYX INC96 citations98
US6764894B2Jul 20, 2004
Elevated pore phase-change memory
OVONYX INC109 citations98
US6613604B2Sep 2, 2003
Method for making small pore for use in programmable resistance memory element
OVONYX INC534 citations98
US6608773B2Aug 19, 2003
Programmable resistance memory array
OVONYX INC82 citations98
US6563164B2May 13, 2003
Compositionally modified resistive electrode
OVONYX INC306 citations98
US7314776B2Jan 1, 2008
Method to manufacture a phase change memory
OVONYX INC69 citations97
US7122824B2Oct 17, 2006
Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
OVONYX INC136 citations97
US7570524B2Aug 4, 2009
Circuitry for reading phase change memory cells having a clamping circuit
OVONYX INC44 citations96
US7499315B2Mar 3, 2009
Programmable matrix array with chalcogenide material
OVONYX INC47 citations96
US6914255B2Jul 5, 2005
Phase change access device for memories
OVONYX INC51 citations96
US6872963B2Mar 29, 2005
Programmable resistance memory element with layered memory material
OVONYX INC61 citations96
US6869883B2Mar 22, 2005
Forming phase change memories
OVONYX INC40 citations96
US6831856B2Dec 14, 2004
Method of data storage using only amorphous phase of electrically programmable phase-change memory element
OVONYX INC60 citations96
Showing the top 50 of 205 patents by PatentIndex Score.