Carbon-containing interfacial layer for phase-change memory

Abstract

A phase-change memory cell may be formed with a carbon-containing interfacial layer that heats a phase-change material. By forming the phase-change material in contact, in one embodiment, with the carbon containing interfacial layer, the amount of heat that may be applied to the phase-change material, at a given current and temperature, may be increased. In some embodiments, the performance of the interfacial layer at high temperatures may be improved by using a wide band gap semiconductor material such as silicon carbide.

What is claimed is:  
     
       1. A memory comprising: 
       a surface;  
       a silicon carbide interfacial layer over said surface; and  
       a phase-change material over said silicon carbide layer.  
     
     
       2. The memory of  claim 1  wherein said surface includes a conductive layer over a semiconductor substrate. 
     
     
       3. The memory of  claim 1  wherein said silicon carbide layer is doped with conductivity-type determining impurities. 
     
     
       4. The memory of  claim 3  including an insulator positioned over said surface, a pore formed through said insulator, said carbon-containing interfacial layer formed in said pore over said surface. 
     
     
       5. The memory of  claim 4  wherein said phase-change material is formed on said carbon-containing interfacial layer and in said pore. 
     
     
       6. The memory of  claim 5  including a sidewall spacer in said pore. 
     
     
       7. The memory of  claim 6  wherein said sidewall spacer is positioned between said interfacial layer and said phase-change material. 
     
     
       8. The memory of  claim 1  wherein said phase-change material includes a chalcogenide material. 
     
     
       9. An electronic device comprising: 
       digital signal processor; and  
       a memory coupled to said processor, said memory including a surface, a silicon carbide interfacial layer over said surface and a phase-change material over said silicon carbide layer.  
     
     
       10. The device of  claim 9  wherein said electronic device is a storage device. 
     
     
       11. The device of  claim 10  wherein said storage device is part of a computer. 
     
     
       12. The device of  claim 11  including a processor, an interface and a bus coupled to said storage. 
     
     
       13. A memory comprising: 
       a semiconductor substrate;  
       a silicon carbide layer positioned over said substrate; and  
       a phase-change material over said silicon carbide layer.  
     
     
       14. The memory of  claim 13  including a conductive layer between said semiconductor substrate and said silicon carbide layer. 
     
     
       15. The memory of  claim 14  including an insulator over said conductive layer, said insulator having a pore defined therein, and said phase-change material and said silicon carbide layer being formed in said pore. 
     
     
       16. The memory of  claim 13  wherein said silicon carbide layer is doped. 
     
     
       17. The memory of  claim 16  wherein said phase-change material includes chalcogenide. 
     
     
       18. The memory of  claim 17  including a sidewall spacer between said phase-change material and said silicon carbide layer.