Inventor · disambiguated record
Daniel Xu
Also filed as: XU DANIEL
24 granted patents·10 pending applications·4,144 citations·filing 1999–2023
97Inventor score
Top patents by PatentIndex Score
34 records- 0199US6933516B2Forming tapered lower electrode phase-change memoriesOVONYX INC·Filed 2004·Granted Aug 23, 2005·279 cites·10 claims
- 0299US6800563B2Forming tapered lower electrode phase-change memoriesOVONYX INC·Filed 2001·Granted Oct 5, 2004·226 cites·10 claims
- 0399US6673700B2Reduced area intersection between electrode and programming elementOVONYX INC·Filed 2001·Granted Jan 6, 2004·648 cites·14 claims
- 0499US6566700B2Carbon-containing interfacial layer for phase-change memoryOVONYX INC·Filed 2001·Granted May 20, 2003·706 cites·18 claims
- 0598US6861267B2Reducing shunts in memories with phase-change materialINTEL CORP·Filed 2001·Granted Mar 1, 2005·334 cites·18 claims
- 0698US6667900B2Method and apparatus to operate a memory cellOVONYX INC·Filed 2001·Granted Dec 23, 2003·277 cites·23 claims
- 0798US6642102B2Barrier material encapsulation of programmable materialINTEL CORP·Filed 2001·Granted Nov 4, 2003·175 cites·13 claims
- 0898US6563164B2Compositionally modified resistive electrodeOVONYX INC·Filed 2001·Granted May 13, 2003·306 cites·28 claims
- 0998US6462984B1Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory arrayINTEL CORP·Filed 2001·Granted Oct 8, 2002·216 cites·20 claims
- 1098US6437383B1Dual trench isolation for a phase-change memory cell and method of making sameINTEL CORP·Filed 2000·Granted Aug 20, 2002·262 cites·15 claims
- 1197US6404665B1Compositionally modified resistive electrodeINTEL CORP·Filed 2000·Granted Jun 11, 2002·229 cites·22 claims
- 1295US6514805B2Trench sidewall profile for device isolationINTEL CORP·Filed 2001·Granted Feb 4, 2003·312 cites·12 claims
- 1391US6265292B1Method of fabrication of a novel flash integrated circuitINTEL CORP·Filed 1999·Granted Jul 24, 2001·81 cites·3 claims
- 1484US6869841B2Carbon-containing interfacial layer for phase-change memoryOVONYX INC·Filed 2003·Granted Mar 22, 2005·28 cites·10 claims
- 1581US6992365B2Reducing leakage currents in memories with phase-change materialOVONYX INC·Filed 2001·Granted Jan 31, 2006·28 cites·19 claims
- 1675US7685854B2Axial spring balancing pin tumbler lockXU FORREST·Filed 2008·Granted Mar 30, 2010·18 cites·9 claims
- 1771US8350356B2Anti-fuse based programmable serial number generatorSEMICONDUCTOR MFG INT SHANGHAI·Filed 2010·Granted Jan 8, 2013·3 cites·14 claims
- 1863US6878618B2Compositionally modified resistive electrodeOVONYX INC·Filed 2003·Granted Apr 12, 2005·9 cites·18 claims
- 1961US7161225B2Reducing shunts in memories with phase-change materialINTEL CORP·Filed 2005·Granted Jan 9, 2007·1 cites·18 claims
- 2057US7064344B2Barrier material encapsulation of programmable materialINTEL CORP·Filed 2003·Granted Jun 20, 2006·6 cites·8 claims
- 2149US2025330447A1System and method for application-based micro-segmentationAVIATRIX SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2243US9780164B2Silicon-on-insulator radio frequency device and silicon-on-insulator substrateSHANGHAI HUAHONG GRACE SEMICONDUCTOR MFG CORP·Filed 2013·Granted Oct 3, 2017·0 cites·15 claims
- 2343US2005032269A1Forming planarized semiconductor structuresFiled 2003·Application pending·0 cites
- 2441US7422917B2Forming tapered lower electrode phase-change memoriesOVONYX INC·Filed 2005·Granted Sep 9, 2008·0 cites·18 claims
- 2540US2006098524A1Forming planarized semiconductor structuresXU DANIEL·Filed 2005·Application pending·0 cites
- 2636US7906391B2Reducing leakage currents in memories with phase-change materialOVONYX INC·Filed 2005·Granted Mar 15, 2011·0 cites·10 claims
- 2735US2004087076A1Reduced area intersection between electrode and programming elementFiled 2003·Application pending·0 cites
- 2835US2010024499A1High Security Cylinder LockXU FORREST·Filed 2009·Application pending·0 cites
- 2935US2007192643A1Power saving system and method for devices based on universal serial busSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Application pending·0 cites
- 3034US2003002338A1Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory arrayFiled 2002·Application pending·0 cites
- 3133US2001024857A1Novel flash integrated circuit and its method of fabricationFiled 2001·Application pending·0 cites
- 3232US2017199022A1External coupling sensorAUCKLAND UNISERVICES LTD·Filed 2015·Application pending·0 cites
- 3330US8536637B2Array architecture for embedded flash memory devicesXU DANIEL·Filed 2010·Granted Sep 17, 2013·0 cites·19 claims
- 3424US2017010130A1Pliable capacitive structure apparatus and methodsXU DANIEL·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →