Assignee
PELLIZZER FABIO
IT·29 granted patents·3 pending applications·222 citations·filing 2004–2012
Top patents by PatentIndex Score
32 records- 0198US9136307B2Memory cells and memory cell formation methods using sealing materialPELLIZZER FABIO·Filed 2012·Granted Sep 15, 2015·43 cites·26 claims
- 0295US8546231B2Memory arrays and methods of forming memory cellsPELLIZZER FABIO·Filed 2011·Granted Oct 1, 2013·21 cites·31 claims
- 0391US9318699B2Resistive memory cell structures and methodsPELLIZZER FABIO·Filed 2012·Granted Apr 19, 2016·10 cites·7 claims
- 0490US7439536B2Phase change memory cell with tubular heater and manufacturing method thereofPELLIZZER FABIO·Filed 2006·Granted Oct 21, 2008·25 cites·33 claims
- 0588US8243497B1Phase change memory device with reduced programming disturbancePELLIZZER FABIO·Filed 2009·Granted Aug 14, 2012·18 cites·21 claims
- 0687US7847329B2Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devicesPELLIZZER FABIO·Filed 2006·Granted Dec 7, 2010·11 cites·9 claims
- 0786US8084789B2Phase change memory with ovonic threshold switchPELLIZZER FABIO·Filed 2010·Granted Dec 27, 2011·6 cites·8 claims
- 0886US7436692B2Phase change memory cell with junction selector and manufacturing method thereofPELLIZZER FABIO·Filed 2005·Granted Oct 14, 2008·14 cites·33 claims
- 0985US8553453B2Phase change memory devicePELLIZZER FABIO·Filed 2007·Granted Oct 8, 2013·11 cites·19 claims
- 1084US8853665B2Semiconductor constructions, memory cells, memory arrays and methods of forming memory cellsPELLIZZER FABIO·Filed 2012·Granted Oct 7, 2014·7 cites·21 claims
- 1181US8785314B2Etch bias homogenizationPELLIZZER FABIO·Filed 2012·Granted Jul 22, 2014·5 cites·31 claims
- 1280US9525007B2Phase change memory device with voltage control elementsPELLIZZER FABIO·Filed 2010·Granted Dec 20, 2016·5 cites·9 claims
- 1380US7639526B2Method for multilevel programming of phase change memory cells using a percolation algorithmPELLIZZER FABIO·Filed 2007·Granted Dec 29, 2009·12 cites·27 claims
- 1480US7560782B2Transistor structure with high input impedance and high current capabilityPELLIZZER FABIO·Filed 2006·Granted Jul 14, 2009·8 cites·14 claims
- 1575US9111856B2Method for fabricating a phase-change memory cellPELLIZZER FABIO·Filed 2008·Granted Aug 18, 2015·6 cites·13 claims
- 1675US7446011B2Array of cells including a selection bipolar transistor and fabrication method thereofPELLIZZER FABIO·Filed 2006·Granted Nov 4, 2008·5 cites·26 claims
- 1774US8410527B2Electrical fuse device based on a phase-change memory element and corresponding programming methodPELLIZZER FABIO·Filed 2011·Granted Apr 2, 2013·3 cites·19 claims
- 1872US8728940B2Memory arrays and methods of forming samePELLIZZER FABIO·Filed 2012·Granted May 20, 2014·2 cites·15 claims
- 1969US7875513B2Self-aligned bipolar junction transistorsPELLIZZER FABIO·Filed 2006·Granted Jan 25, 2011·3 cites·6 claims
- 2068US9269747B2Self-aligned interconnection for integrated circuitsPELLIZZER FABIO·Filed 2012·Granted Feb 23, 2016·1 cites·7 claims
- 2163US8885382B2Compact socket connection to cross-point arrayPELLIZZER FABIO·Filed 2012·Granted Nov 11, 2014·2 cites·30 claims
- 2262US7563684B2Process for manufacturing an array of cells including selection bipolar junction transistorsPELLIZZER FABIO·Filed 2005·Granted Jul 21, 2009·2 cites·23 claims
- 2359US8921196B2Double patterning method for creating a regular array of pillars with dual shallow trench isolationPELLIZZER FABIO·Filed 2008·Granted Dec 30, 2014·0 cites·14 claims
- 2452US8945403B2Material test structurePELLIZZER FABIO·Filed 2012·Granted Feb 3, 2015·0 cites·17 claims
- 2552US8293598B2Process for manufacturing a memory device including a vertical bipolar junction transistor and a CMOS transistor with spacersPELLIZZER FABIO·Filed 2009·Granted Oct 23, 2012·1 cites·20 claims
- 2650US8686394B2Semiconductor constructions and memory arraysPELLIZZER FABIO·Filed 2012·Granted Apr 1, 2014·0 cites·18 claims
- 2749US8766344B2Vertical mosfet transistor, in particular operating as a selector in nonvolatile memory devicesPELLIZZER FABIO·Filed 2010·Granted Jul 1, 2014·0 cites·20 claims
- 2849US8599599B2Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contactPELLIZZER FABIO·Filed 2011·Granted Dec 3, 2013·0 cites·14 claims
- 2949US2010197120A1Forming Phase Change Memory Cell With MicrotrenchesPELLIZZER FABIO·Filed 2010·Application pending·0 cites
- 3047US2006097341A1Forming phase change memory cell with microtrenchesPELLIZZER FABIO·Filed 2004·Application pending·0 cites
- 3146US8743598B2Reversing a potential polarity for reading phase-change cells to shorten a recovery delay after programmingPELLIZZER FABIO·Filed 2008·Granted Jun 3, 2014·1 cites·16 claims
- 3244US2011084247A1Self-Aligned Bipolar Junction TransistorsPELLIZZER FABIO·Filed 2010·Application pending·0 cites
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