Assignee
POLAR SEMICONDUCTOR LLC
US·13 granted patents·4 pending applications·19 citations·filing 2015–2022
Top patents by PatentIndex Score
17 records- 0184US10388783B2Floating-shield triple-gate MOSFETPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Aug 20, 2019·7 cites·13 claims
- 0283US9899343B2High voltage tolerant bonding pad structure for trench-based semiconductor devicesPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Feb 20, 2018·5 cites·21 claims
- 0377US10580861B2Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2018·Granted Mar 3, 2020·2 cites·9 claims
- 0473US9818828B2Termination trench structures for high-voltage split-gate MOS devicesPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Nov 14, 2017·2 cites·26 claims
- 0565US10153366B2LDMOS transistor with lightly-doped annular RESURF peripheryPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Dec 11, 2018·2 cites·18 claims
- 0661US11245006B2Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2019·Granted Feb 8, 2022·0 cites·20 claims
- 0760US10141440B2Drift-region field control of an LDMOS transistor using biased shallow-trench field platesPOLAR SEMICONDUCTOR LLC·Filed 2016·Granted Nov 27, 2018·1 cites·21 claims
- 0858US12142481B2Forming passivation stack having etch stop layerPOLAR SEMICONDUCTOR LLC·Filed 2022·Granted Nov 12, 2024·0 cites·24 claims
- 0951US11264496B2Transistor with buried p-field termination regionPOLAR SEMICONDUCTOR LLC·Filed 2020·Granted Mar 1, 2022·0 cites·11 claims
- 1050US11329147B2Insulated gate bipolar transistor with epitaxial layer formed on recombination regionPOLAR SEMICONDUCTOR LLC·Filed 2020·Granted May 10, 2022·0 cites·7 claims
- 1148US12015079B2Transistor with single termination trench having depth more than 10 micronsPOLAR SEMICONDUCTOR LLC·Filed 2021·Granted Jun 18, 2024·0 cites·17 claims
- 1248US2016247879A1Trench semiconductor device layout configurationsPOLAR SEMICONDUCTOR LLC·Filed 2016·Application pending·0 cites
- 1337US10896885B2High-voltage MOSFET structuresPOLAR SEMICONDUCTOR LLC·Filed 2017·Granted Jan 19, 2021·0 cites·19 claims
- 1436US9704765B2Method of controlling etch-pattern density and device made using such methodPOLAR SEMICONDUCTOR LLC·Filed 2015·Granted Jul 11, 2017·0 cites·20 claims
- 1534US2017194485A1Split-gate superjunction power transistorPOLAR SEMICONDUCTOR LLC·Filed 2016·Application pending·0 cites
- 1632US2016380086A1Device parameter normalization about a periphery of a non-circular emitter of a lateral bipolar transistorPOLAR SEMICONDUCTOR LLC·Filed 2015·Application pending·0 cites
- 1732US2019081147A1Mosfet with vertical variation of gate-pillar separationPOLAR SEMICONDUCTOR LLC·Filed 2017·Application pending·0 cites
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