Assignee

SANDISK TECHNOLOGIES LLC

US2,072 patents

Top patents by PatentIndex Score

US10629616B1Apr 21, 2020

Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

SANDISK TECHNOLOGIES LLC143 citations99

US10354980B1Jul 16, 2019

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

SANDISK TECHNOLOGIES LLC168 citations99

US10283493B1May 7, 2019

Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof

SANDISK TECHNOLOGIES LLC288 citations99

US9960181B1May 1, 2018

Three-dimensional memory device having contact via structures in overlapped terrace region and method of making thereof

SANDISK TECHNOLOGIES LLC155 citations99

US9875929B1Jan 23, 2018

Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof

SANDISK TECHNOLOGIES LLC146 citations99

US10700090B1Jun 30, 2020

Three-dimensional flat NAND memory device having curved memory elements and methods of making the same

SANDISK TECHNOLOGIES LLC46 citations98

US10665581B1May 26, 2020

Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same

SANDISK TECHNOLOGIES LLC86 citations98

US10528643B1Jan 7, 2020

Vector-matrix multiplication using non-volatile memory cells

SANDISK TECHNOLOGIES LLC66 citations98

US10510738B2Dec 17, 2019

Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof

SANDISK TECHNOLOGIES LLC104 citations98

US10381376B1Aug 13, 2019

Three-dimensional flat NAND memory device including concave word lines and method of making the same

SANDISK TECHNOLOGIES LLC58 citations98

US10381371B2Aug 13, 2019

Through-memory-level via structures for a three-dimensional memory device

SANDISK TECHNOLOGIES LLC38 citations98

US10355009B1Jul 16, 2019

Concurrent formation of memory openings and contact openings for a three-dimensional memory device

SANDISK TECHNOLOGIES LLC62 citations98

US10354987B1Jul 16, 2019

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

SANDISK TECHNOLOGIES LLC139 citations98

US10304852B1May 28, 2019

Three-dimensional memory device containing through-memory-level contact via structures

SANDISK TECHNOLOGIES LLC115 citations98

US10290648B1May 14, 2019

Three-dimensional memory device containing air gap rails and method of making thereof

SANDISK TECHNOLOGIES LLC71 citations98

US10283513B1May 7, 2019

Three-dimensional memory device with annular blocking dielectrics and method of making thereof

SANDISK TECHNOLOGIES LLC82 citations98

US10276583B2Apr 30, 2019

Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof

SANDISK TECHNOLOGIES LLC51 citations98

US10256247B1Apr 9, 2019

Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof

SANDISK TECHNOLOGIES LLC77 citations98

US10192878B1Jan 29, 2019

Three-dimensional memory device with self-aligned multi-level drain select gate electrodes

SANDISK TECHNOLOGIES LLC54 citations98

US10115681B1Oct 30, 2018

Compact three-dimensional memory device having a seal ring and methods of manufacturing the same

SANDISK TECHNOLOGIES LLC209 citations98

US10103169B1Oct 16, 2018

Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process

SANDISK TECHNOLOGIES LLC70 citations98

US9972641B1May 15, 2018

Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof

SANDISK TECHNOLOGIES LLC68 citations98

US9972640B1May 15, 2018

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

SANDISK TECHNOLOGIES LLC65 citations98

US9953992B1Apr 24, 2018

Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof

SANDISK TECHNOLOGIES LLC64 citations98

US9922987B1Mar 20, 2018

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

SANDISK TECHNOLOGIES LLC99 citations98

US9853038B1Dec 26, 2017

Three-dimensional memory device having integrated support and contact structures and method of making thereof

SANDISK TECHNOLOGIES LLC119 citations98

US9831266B2Nov 28, 2017

Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same

SANDISK TECHNOLOGIES LLC58 citations98

US9824966B1Nov 21, 2017

Three-dimensional memory device containing a lateral source contact and method of making the same

SANDISK TECHNOLOGIES LLC129 citations98

US9818693B2Nov 14, 2017

Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof

SANDISK TECHNOLOGIES LLC61 citations98

US9754963B1Sep 5, 2017

Multi-tier memory stack structure containing two types of support pillar structures

SANDISK TECHNOLOGIES LLC107 citations98

US9673257B1Jun 6, 2017

Vertical thin film transistors with surround gates

SANDISK TECHNOLOGIES LLC197 citations98

US9576967B1Feb 21, 2017

Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings

SANDISK TECHNOLOGIES LLC199 citations98

US10700093B1Jun 30, 2020

Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same

SANDISK TECHNOLOGIES LLC42 citations97

US10381362B1Aug 13, 2019

Three-dimensional memory device including inverted memory stack structures and methods of making the same

SANDISK TECHNOLOGIES LLC139 citations97

US10347654B1Jul 9, 2019

Three-dimensional memory device employing discrete backside openings and methods of making the same

SANDISK TECHNOLOGIES LLC61 citations97

US10290650B1May 14, 2019

Self-aligned tubular electrode portions inside memory openings for drain select gate electrodes in a three-dimensional memory device

SANDISK TECHNOLOGIES LLC77 citations97

US10229723B1Mar 12, 2019

Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten

SANDISK TECHNOLOGIES LLC69 citations97

US10199359B1Feb 5, 2019

Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

SANDISK TECHNOLOGIES LLC88 citations97

US10038006B2Jul 31, 2018

Through-memory-level via structures for a three-dimensional memory device

SANDISK TECHNOLOGIES LLC63 citations97

US10020363B2Jul 10, 2018

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

SANDISK TECHNOLOGIES LLC51 citations97

US10008570B2Jun 26, 2018

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

SANDISK TECHNOLOGIES LLC62 citations97

US9991280B2Jun 5, 2018

Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same

SANDISK TECHNOLOGIES LLC40 citations97

US9985098B2May 29, 2018

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

SANDISK TECHNOLOGIES LLC85 citations97

US9941299B1Apr 10, 2018

Three-dimensional ferroelectric memory device and method of making thereof

SANDISK TECHNOLOGIES LLC99 citations97

US9876031B1Jan 23, 2018

Three-dimensional memory device having passive devices at a buried source line level and method of making thereof

SANDISK TECHNOLOGIES LLC113 citations97

US9818759B2Nov 14, 2017

Through-memory-level via structures for a three-dimensional memory device

SANDISK TECHNOLOGIES LLC52 citations97

US9748172B2Aug 29, 2017

Floating staircase word lines and process in a 3D non-volatile memory having vertical bit lines

SANDISK TECHNOLOGIES LLC65 citations97

Showing the top 50 of 2,072 patents by PatentIndex Score.

SANDISK TECHNOLOGIES LLC

Top patents by PatentIndex Score

Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof

Three-dimensional memory device having contact via structures in overlapped terrace region and method of making thereof

Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof

Three-dimensional flat NAND memory device having curved memory elements and methods of making the same

Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same

Vector-matrix multiplication using non-volatile memory cells

Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof

Three-dimensional flat NAND memory device including concave word lines and method of making the same

Through-memory-level via structures for a three-dimensional memory device

Concurrent formation of memory openings and contact openings for a three-dimensional memory device

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Three-dimensional memory device containing through-memory-level contact via structures

Three-dimensional memory device containing air gap rails and method of making thereof

Three-dimensional memory device with annular blocking dielectrics and method of making thereof

Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof

Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof

Three-dimensional memory device with self-aligned multi-level drain select gate electrodes

Compact three-dimensional memory device having a seal ring and methods of manufacturing the same

Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process

Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof

Three-dimensional memory device with self-aligned drain side select gate electrodes and method of making thereof

Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereof

Three-dimensional memory device containing separately formed drain select transistors and method of making thereof

Three-dimensional memory device having integrated support and contact structures and method of making thereof

Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same

Three-dimensional memory device containing a lateral source contact and method of making the same

Through-memory-level via structures for a three-dimensional memory device

Memory hole size variation in a 3D stacked memory

Through-memory-level via structures for a three-dimensional memory device

Three-dimensional memory device with charge carrier injection wells for vertical channels and method of making and using thereof

Multi-tier memory stack structure containing two types of support pillar structures

Vertical thin film transistors with surround gates

Method of suppressing epitaxial growth in support openings and three-dimensional memory device containing non-epitaxial support pillars in the support openings

Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same

Three-dimensional memory device including inverted memory stack structures and methods of making the same

Three-dimensional memory device employing discrete backside openings and methods of making the same

Self-aligned tubular electrode portions inside memory openings for drain select gate electrodes in a three-dimensional memory device

Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten

Three-dimensional memory device employing direct source contact and hole current detection and method of making the same

Through-memory-level via structures for a three-dimensional memory device

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same

Bulb-shaped memory stack structures for direct source contact in three-dimensional memory device

Three-dimensional ferroelectric memory device and method of making thereof

Three-dimensional memory device having passive devices at a buried source line level and method of making thereof

Through-memory-level via structures for a three-dimensional memory device

Floating staircase word lines and process in a 3D non-volatile memory having vertical bit lines