Assignee
SATOH ISSEI
JP·7 granted patents·1 pending application·5 citations·filing 2009–2012
Top patents by PatentIndex Score
8 records- 0166US8697550B2Method of manufacturing GaN-based filmSATOH ISSEI·Filed 2011·Granted Apr 15, 2014·2 cites·7 claims
- 0266US8259386B2Wavelength conversion element and method for manufacturing wavelength conversion elementSATOH ISSEI·Filed 2009·Granted Sep 4, 2012·2 cites·6 claims
- 0361US8715414B2Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial waferSATOH ISSEI·Filed 2009·Granted May 6, 2014·1 cites·9 claims
- 0454US8540817B2Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial waferSATOH ISSEI·Filed 2009·Granted Sep 24, 2013·0 cites·4 claims
- 0552US8962365B2Method of manufacturing GaN-based film and composite substrate used thereforSATOH ISSEI·Filed 2011·Granted Feb 24, 2015·0 cites·6 claims
- 0649US8591653B2Compound semiconductor single-crystal manufacturing device and manufacturing methodSATOH ISSEI·Filed 2009·Granted Nov 26, 2013·0 cites·11 claims
- 0739US2013168693A1Protective-film-attached composite substrate and method of manufacturing semiconductor deviceSATOH ISSEI·Filed 2012·Application pending·0 cites
- 0837US8613802B2Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystalSATOH ISSEI·Filed 2010·Granted Dec 24, 2013·0 cites·3 claims
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