Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer

Abstract

There are provided a method for manufacturing a Si (1-v-w-x) C w Al x N v substrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a Si (1-v-w-x) C w Al x N v substrate, and an epitaxial wafer. A method for manufacturing a Si (1-v-w-x) C w Al x N v substrate 10 a includes the following steps. First, a Si substrate 11 is prepared. A Si (1-v-w-x) C w Al x N v layer (0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrate at a temperature below 550° C.

The invention claimed is: 
     
       1. A method for manufacturing a Si (1-v-w-x) C w Al x N v  substrate, comprising the steps of:
 preparing a Si substrate; and 
 growing a Si (1-v-w-x) C w Al x N v  layer (0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1) on the Si substrate at a temperature below 550° C., 
 wherein the Si (1-v-w-x) C w Al x N v  layer has a composition range 0.001≦v+x≦0.1. 
 
     
     
       2. The method for manufacturing a Si (1-v-w-x) C w Al x N v  substrate according to  claim 1 , further comprising the step of removing the Si substrate after the growing step. 
     
     
       3. The method for manufacturing a Si (1-v-w-x) C w Al x N v  substrate according to  claim 1 , wherein the Si (1-v-w-x) C w Al x N v  layer is grown by a pulsed laser deposition method in the growing step. 
     
     
       4. A method for manufacturing an epitaxial wafer, comprising the steps of:
 manufacturing a Si (1-v-w-x) C w Al x N v  substrate by a method for manufacturing a Si (1-v-w-x) C w Al x N v  substrate according to  claim 1 ; and 
 growing an Al (1-y-z) Ga y In z N layer (0≦y≦1, 0≦z≦1, and 0≦y+z≦1) on the Si (1-v-w-x) C w Al x N v  layer.