Inventor

FUJIWARA SHINSUKE

JP61 patents

⚠️ This page may combine multiple inventors who share the name “FUJIWARA SHINSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJIWARA SHINSUKE

SUMITOMO ELECTRIC INDUSTRIES

White color light emitting device

White color light emitting device

GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)

Method for fabricating gallium nitride based semiconductor electronic device

Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device

III-nitride single-crystal growth method

Method of suppressing convection in a fluid in a cylindrical vessel

Method for the heat treatment of ZnSe crystal

Method for the heat treatment of ZnSe crystal

Silicon carbide substrate and method of manufacturing the same

Group III nitride crystal and method of its growth

Method for the heat treatment of a ZnSe crystal substrate, heat treated substrate and light emission device

Dislocation in SiC semiconductor substrate

Dislocation in SiC semiconductor substrate

Group III nitride crystal substrates and group III nitride crystal

GaN-crystal free-standing substrate and method for producing the same

III nitride crystal substrate and light-emitting device

Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer

Dislocations in SiC semiconductor substrate

Method for producing group III nitride crystal

Group III nitride single crystal and method of its growth

Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer

AIGaInN single-crystal wafer

FUJIWARA SHINSUKE

GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof

Method of manufacturing GaN-based film

GaN-crystal free-standing substrate and method for producing the same

III nitride crystal substrate, and light-emitting device and method of its manufacture

Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate

NISHIGUCHI TARO

Semiconductor substrate

Semiconductor substrate

Semiconductor substrate

Method for manufacturing silicon carbide substrate

NIPPON DENKI HOME ELECTRONICS

Sheet feeding device for an impact-type printer

Paper feeder

Dot line printer

Printer head bank and method of manufacturing the same

SATOH ISSEI

Method of manufacturing GaN-based film

Method of manufacturing GaN-based film and composite substrate used therefor

Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer

Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer

HASHIMOTO SHIN

Method for forming epitaxial wafer and method for fabricating semiconductor device

Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer

Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device

INOUE HIROKI

Silicon carbide substrate manufacturing method and silicon carbide substrate

UEMATSU KOJI

Group III nitride crystal and method for producing the same

HARADA SHIN

Silicon carbide substrate and method of manufacturing the same

SASAKI MAKOTO

Method for manufacturing semiconductor substrate

NEC CORP

Image scanner

HORI TSUTOMU

Single crystal silicon carbide substrate and method of manufacturing the same

UEMURA TOMOKI

Method for manufacturing gallium nitride crystal and gallium nitride wafer