Inventor
SATOH ISSEI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “SATOH ISSEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
8 patentsUS7995267B2Aug 9, 2011
Wavelength converter manufacturing method and wavelength converter
SUMITOMO ELECTRIC INDUSTRIES7 citations84
US11891720B2Feb 6, 2024
Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations62
US12258677B2Mar 25, 2025
Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamond
SUMITOMO ELECTRIC INDUSTRIES0 citations59
US8937339B2Jan 20, 2015
Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8363326B2Jan 29, 2013
AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8357597B2Jan 22, 2013
Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8748890B2Jun 10, 2014
Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method
SUMITOMO ELECTRIC INDUSTRIES0 citations51
US8367577B2Feb 5, 2013
Thin film of aluminum nitride and process for producing the thin film of aluminum nitride
SUMITOMO ELECTRIC INDUSTRIES1 citations51
SATOH ISSEI
7 patentsUS8697550B2Apr 15, 2014
Method of manufacturing GaN-based film
SATOH ISSEI2 citations61
US8259386B2Sep 4, 2012
Wavelength conversion element and method for manufacturing wavelength conversion element
SATOH ISSEI2 citations61
US8962365B2Feb 24, 2015
Method of manufacturing GaN-based film and composite substrate used therefor
SATOH ISSEI0 citations51
US8715414B2May 6, 2014
Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
SATOH ISSEI1 citations51
US8591653B2Nov 26, 2013
Compound semiconductor single-crystal manufacturing device and manufacturing method
SATOH ISSEI0 citations51
US8540817B2Sep 24, 2013
Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer
SATOH ISSEI0 citations51
US8613802B2Dec 24, 2013
Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal
SATOH ISSEI0 citations40
SEKI YUKI
2 patentsUS9184228B2Nov 10, 2015
Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer
SEKI YUKI2 citations59
US8497185B2Jul 30, 2013
Method of manufacturing semiconductor wafer, and composite base and composite substrate for use in that method
SEKI YUKI2 citations59