P

Inventor

MIYANAGA MICHIMASA

JP33 patents
⚠️ This page may combine multiple inventors who share the name “MIYANAGA MICHIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

19 patents
US7390359B2Jun 24, 2008

Nitride semiconductor wafer

SUMITOMO ELECTRIC INDUSTRIES276 citations99
US6800360B2Oct 5, 2004

Porous ceramics and method of preparing the same as well as microstrip substrate

SUMITOMO ELECTRIC INDUSTRIES52 citations94
US7995267B2Aug 9, 2011

Wavelength converter manufacturing method and wavelength converter

SUMITOMO ELECTRIC INDUSTRIES7 citations84
US6544917B1Apr 8, 2003

Si3N4 ceramic, Si-base composition for its production, and method for its production

SUMITOMO ELECTRIC INDUSTRIES14 citations84
US6143677ANov 7, 2000

Silicon nitride sinter having high thermal conductivity and process for preparing the same

SUMITOMO ELECTRIC INDUSTRIES16 citations84
US6001759ADec 14, 1999

Silicon nitride sintered body, method of preparing the same and nitrided compact

SUMITOMO ELECTRIC INDUSTRIES12 citations74
US6599637B1Jul 29, 2003

Silicon nitride composite substrate

SUMITOMO ELECTRIC INDUSTRIES8 citations71
US8872309B2Oct 28, 2014

Composite of III-nitride crystal on laterally stacked substrates

SUMITOMO ELECTRIC INDUSTRIES3 citations63
US8709923B2Apr 29, 2014

Method of manufacturing III-nitride crystal

SUMITOMO ELECTRIC INDUSTRIES3 citations63
US8702865B2Apr 22, 2014

AlxGa1-xN crystal substrate

SUMITOMO ELECTRIC INDUSTRIES2 citations63
US8361226B2Jan 29, 2013

III-nitride single-crystal growth method

SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7041366B2May 9, 2006

Porous silicon nitride ceramics and method for producing the same

SUMITOMO ELECTRIC INDUSTRIES3 citations63
US6617272B2Sep 9, 2003

Si3N4 sintered body with high thermal conductivity and method for producing the same

SUMITOMO ELECTRIC INDUSTRIES3 citations58
US9064706B2Jun 23, 2015

Composite of III-nitride crystal on laterally stacked substrates

SUMITOMO ELECTRIC INDUSTRIES1 citations52
US8937339B2Jan 20, 2015

Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8377204B2Feb 19, 2013

Group III nitride single crystal and method of its growth

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8363326B2Jan 29, 2013

AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8357597B2Jan 22, 2013

Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer

SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8367577B2Feb 5, 2013

Thin film of aluminum nitride and process for producing the thin film of aluminum nitride

SUMITOMO ELECTRIC INDUSTRIES1 citations51

SATOH ISSEI

5 patents

MIZUHARA NAHO

3 patents

MIYANAGA MICHIMASA

3 patents

TANIZAKI KEISUKE

1 patent

ARAKAWA SATOSHI

1 patent

NUMANO MASATADA

1 patent