Inventor
MIYANAGA MICHIMASA
JP33 patents
⚠️ This page may combine multiple inventors who share the name “MIYANAGA MICHIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
19 patentsUS7390359B2Jun 24, 2008
Nitride semiconductor wafer
SUMITOMO ELECTRIC INDUSTRIES276 citations99
US6800360B2Oct 5, 2004
Porous ceramics and method of preparing the same as well as microstrip substrate
SUMITOMO ELECTRIC INDUSTRIES52 citations94
US7995267B2Aug 9, 2011
Wavelength converter manufacturing method and wavelength converter
SUMITOMO ELECTRIC INDUSTRIES7 citations84
US6544917B1Apr 8, 2003
Si3N4 ceramic, Si-base composition for its production, and method for its production
SUMITOMO ELECTRIC INDUSTRIES14 citations84
US6143677ANov 7, 2000
Silicon nitride sinter having high thermal conductivity and process for preparing the same
SUMITOMO ELECTRIC INDUSTRIES16 citations84
US6001759ADec 14, 1999
Silicon nitride sintered body, method of preparing the same and nitrided compact
SUMITOMO ELECTRIC INDUSTRIES12 citations74
US6599637B1Jul 29, 2003
Silicon nitride composite substrate
SUMITOMO ELECTRIC INDUSTRIES8 citations71
US8872309B2Oct 28, 2014
Composite of III-nitride crystal on laterally stacked substrates
SUMITOMO ELECTRIC INDUSTRIES3 citations63
US8709923B2Apr 29, 2014
Method of manufacturing III-nitride crystal
SUMITOMO ELECTRIC INDUSTRIES3 citations63
US8702865B2Apr 22, 2014
AlxGa1-xN crystal substrate
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US8361226B2Jan 29, 2013
III-nitride single-crystal growth method
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7041366B2May 9, 2006
Porous silicon nitride ceramics and method for producing the same
SUMITOMO ELECTRIC INDUSTRIES3 citations63
US6617272B2Sep 9, 2003
Si3N4 sintered body with high thermal conductivity and method for producing the same
SUMITOMO ELECTRIC INDUSTRIES3 citations58
US9064706B2Jun 23, 2015
Composite of III-nitride crystal on laterally stacked substrates
SUMITOMO ELECTRIC INDUSTRIES1 citations52
US8937339B2Jan 20, 2015
Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8377204B2Feb 19, 2013
Group III nitride single crystal and method of its growth
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8363326B2Jan 29, 2013
AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8357597B2Jan 22, 2013
Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
SUMITOMO ELECTRIC INDUSTRIES0 citations52
US8367577B2Feb 5, 2013
Thin film of aluminum nitride and process for producing the thin film of aluminum nitride
SUMITOMO ELECTRIC INDUSTRIES1 citations51
SATOH ISSEI
5 patentsUS8259386B2Sep 4, 2012
Wavelength conversion element and method for manufacturing wavelength conversion element
SATOH ISSEI2 citations61
US8715414B2May 6, 2014
Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer
SATOH ISSEI1 citations51
US8591653B2Nov 26, 2013
Compound semiconductor single-crystal manufacturing device and manufacturing method
SATOH ISSEI0 citations51
US8540817B2Sep 24, 2013
Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer
SATOH ISSEI0 citations51
US8613802B2Dec 24, 2013
Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal
SATOH ISSEI0 citations40
MIZUHARA NAHO
3 patentsUS8404042B2Mar 26, 2013
Group-III nitride crystal composite
MIZUHARA NAHO28 citations91
US8258051B2Sep 4, 2012
Method of manufacturing III-nitride crystal, and semiconductor device utilizing the crystal
MIZUHARA NAHO14 citations91
US8470090B2Jun 25, 2013
AlN crystal and method for growing the same, and AlN crystal substrate
MIZUHARA NAHO0 citations40
MIYANAGA MICHIMASA
3 patentsUS8293011B2Oct 23, 2012
Method for growing group III nitride semiconductor crystal and growing device for group III nitride semiconductor crystal
MIYANAGA MICHIMASA2 citations60
US8293012B2Oct 23, 2012
Method for growing AlxGa1-xN crystal, and AlxGa1-xN crystal substrate
MIYANAGA MICHIMASA0 citations49
US9254519B2Feb 9, 2016
Composite material, part for continuous casting, continuous casting nozzle, continuous casting method, cast material, and magnesium alloy cast coil material
MIYANAGA MICHIMASA0 citations48