Assignee

SHINBORI ATSUSHI

JP·1 granted patent·1 pending application·20 citations·filing 2008–2012

Technology mixH10D2 H10W2

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2 records

0184US8129780B2Semiconductor device having a trench type high-power MISFETSHINBORI ATSUSHI·Filed 2008·Granted Mar 6, 2012·20 cites·10 claims
0243US2012129307A1Semiconductor device and manufacturing method of the sameSHINBORI ATSUSHI·Filed 2012·Application pending·0 cites

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