Assignee
SONEHARA TAKESHI
JP·8 granted patents·3 pending applications·46 citations·filing 2010–2012
Top patents by PatentIndex Score
11 records- 0189US8907318B2Resistance change memorySONEHARA TAKESHI·Filed 2012·Granted Dec 9, 2014·6 cites·10 claims
- 0288US8546779B2Resistance change memory and manufacturing method thereofSONEHARA TAKESHI·Filed 2010·Granted Oct 1, 2013·11 cites·15 claims
- 0384US8927955B2Resistance change memorySONEHARA TAKESHI·Filed 2011·Granted Jan 6, 2015·9 cites·16 claims
- 0484US8507887B2Resistance change memory and method of manufacturing the sameSONEHARA TAKESHI·Filed 2010·Granted Aug 13, 2013·7 cites·18 claims
- 0584US8481988B2Resistance change memory and manufacturing method thereofSONEHARA TAKESHI·Filed 2010·Granted Jul 9, 2013·7 cites·11 claims
- 0671US9048176B2Nonvolatile storage deviceSONEHARA TAKESHI·Filed 2012·Granted Jun 2, 2015·2 cites·7 claims
- 0767US8723150B2Semiconductor memory device having a reversibly variable resistance layerSONEHARA TAKESHI·Filed 2012·Granted May 13, 2014·1 cites·15 claims
- 0865US8325535B2Nonvolatile semiconductor storage deviceSONEHARA TAKESHI·Filed 2011·Granted Dec 4, 2012·3 cites·20 claims
- 0950US2010315857A1Resistance change memorySONEHARA TAKESHI·Filed 2010·Application pending·0 cites
- 1040US2012043517A1Nonvolatile semiconductor storage deviceSONEHARA TAKESHI·Filed 2011·Application pending·0 cites
- 1134US2012025160A1Nonvolatile memory deviceSONEHARA TAKESHI·Filed 2011·Application pending·0 cites
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