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THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES
CN·8 granted patents·0 citations·filing 2014–2019
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8 records- 0144US11366946B2Method and apparatus for obtaining surface potentialTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2018·Granted Jun 21, 2022·0 cites·10 claims
- 0243US11264461B2Graphene electrochemical transfer method assisted by multiple supporting filmsTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2019·Granted Mar 1, 2022·0 cites·17 claims
- 0341US10840050B2Field emission cathode electron source and array thereofTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2019·Granted Nov 17, 2020·0 cites·7 claims
- 0440US11010530B2Method and apparatus for designing resistive random access memoryTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2018·Granted May 18, 2021·0 cites·8 claims
- 0540US10700276B2Preparation method of Cu-based resistive random access memory, and memoryTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted Jun 30, 2020·0 cites·9 claims
- 0639US10305035B2Preparation method of Cu-based resistive random access memoryTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted May 28, 2019·0 cites·13 claims
- 0739US10176287B2STI stress effect modeling method and device of an MOS deviceTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2014·Granted Jan 8, 2019·0 cites·7 claims
- 0832US10720578B2Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodesTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted Jul 21, 2020·0 cites·6 claims
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