Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodes

Abstract

Provided are a self-gating resistive storage device and a method for fabrication thereof; said self-gating resistive storage device comprises: lower electrodes; insulating dielectric layers arranged perpendicular to, and intersecting with, the lower electrodes to form a stacked structure, said stacked structure being provided with a vertical trench; a gating layer grown on the lower electrodes by means of self-alignment technique, the interlayer leakage channel running through the gating layer being isolated via the insulating dielectric layers; a resistance transition layer arranged in the vertical trench and connected to the insulating dielectric layers and the gating layer; and an upper electrode arranged in the resistance transition layer. In the storage device provided by the described technical solution, the gating layer is grown on the lower electrodes by means of self-alignment technique, such that the interlayer leakage channel running through the gating layer is isolated via the insulating dielectric layers; thus leakage between the upper and lower word lines through the gating layer is prevented, solving the technical problem in the prior art of leakage between the upper and lower word lines in a self-gating resistive storage device, and improving the reliability of the device.

What is claimed is: 
     
       1. A self-gating resistive storage device, comprising:
 a substrate on a bottom side of the self-gating resistive storage device; 
 a plurality of lower electrodes; 
 a plurality of insulating dielectric layers, each of the plurality of insulating dielectric layers interposed between each of the plurality of lower electrodes to form a stacked structure on the substrate; 
 a vertical trench arranged in the stacked structure, the vertical trench extending from a top of the stacked structure to a portion of a first insulating dielectric layer of the plurality of insulating dielectric layers, the first insulating dielectric layer of the plurality of insulating dielectric layers configured to isolate a first lower electrode of the plurality of lower electrodes from the substrate, wherein a bottom of the vertical trench does not reach the substrate; 
 a gating layer coupled with the plurality of lower electrodes, the gate layer being isolated via the plurality of insulating dielectric layers; 
 a resistance transition layer arranged in the vertical trench and connected to the plurality of insulating dielectric layers and the gating layer; and 
 an upper electrode arranged in the resistance transition layer, 
 wherein the lower electrodes are made of one of the following materials or an alloy composed of at least two of the materials: W, Cu, Ru, Ti, Co, Mo, Ir, Nb, TiN, TaN, IrO 2 , CuAI, CuTe and Cu 3 Ge; and 
 wherein the resistance transition layer is made of one of CuS, AgS, AgGeSe, CulxSy, SiO 2 ,WOx, NiO, CuOx, ZnO, CoO, Y 2 O 3 , Si, PrCaMnO (PCMO), strontium titanate (STO). 
 
     
     
       2. The self-gating resistive storage device according to  claim 1 , wherein the resistive storage device has a non-linear characteristic in low resistance state. 
     
     
       3. The self-gating resistive storage device according to  claim 1 , wherein the gating layer is made of one of the following oxides: tungsten oxide, titanium oxide, copper oxide, tantalum oxide, cobalt oxide, molybdenum oxide, niobium oxide, nickel oxide and iridium oxide. 
     
     
       4. The self-gating resistive storage device according to  claim 1 , wherein the thicknesses of the lower electrodes and/or the upper electrode are 1 nm to 100 nm. 
     
     
       5. The self-gating resistive storage device according to  claim 1 , wherein the thickness of the resistance transition layer is 1 nm to 100 nm. 
     
     
       6. The self-gating resistive storage device according to  claim 1 , wherein the upper electrode is made of one of the following materials or an alloy composed of at least two of the materials: W, Al, Cu, Au, Ag, Pt, Ru, Ti, Ta, Pb, Co, Mo, Ir, Ni, TiN, TaN, IrO 2 , CuTe and Cu 3 Ge.