Inventor · disambiguated record
Hangbing Lv
Also filed as: LV HANGBING
32 granted patents·9 pending applications·13 citations·filing 2011–2024
93Inventor score
Files withINST OF MICROELECTRONICS CAS28INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES5THE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES3HUAWEI TECH CO LTD2INST OF MICROELECTRONICS CHINSE ACADEMY OF SCIENCES1
Top patents by PatentIndex Score
41 records- 0176US11189345B2Method for implementing logic calculation based on a crossbar array structure of resistive switching deviceINST OF MICROELECTRONICS CAS·Filed 2018·Granted Nov 30, 2021·4 cites·15 claims
- 0272US10608177B2Self-gated RRAM cell and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2014·Granted Mar 31, 2020·2 cites·12 claims
- 0369US11245074B2Resistance random access memory and method for fabricating the sameINST OF MICROELECTRONICS CAS·Filed 2017·Granted Feb 8, 2022·1 cites·10 claims
- 0467US8642989B2Resistive random access memory cell and memoryLIU QI·Filed 2011·Granted Feb 4, 2014·4 cites·15 claims
- 0562US2025040147A1Memory and preparation method therefor, and electronic deviceHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 0656US12393831B2Artificial sensory nervous circuit and manufacturing method thereofINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2019·Granted Aug 19, 2025·0 cites·10 claims
- 0755US12260902B2Complementary storage unit and method of preparing the same, and complementary memoryINST OF MICROELECTRONICS CAS·Filed 2020·Granted Mar 25, 2025·0 cites·12 claims
- 0854US10297748B2Three-terminal atomic switching device and method of manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2014·Granted May 21, 2019·0 cites·22 claims
- 0954US9508776B2Gating device cell for cross array of bipolar resistive memory cellsINST OF MICROELECTRONICS CAS·Filed 2013·Granted Nov 29, 2016·1 cites·17 claims
- 1053US11790968B2Spintronic device, SOT-MRAM storage cell, storage array and in-memory computing circuitINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2020·Granted Oct 17, 2023·0 cites·14 claims
- 1152US12495557B2Method of preparing programmable diode, programmable diode and ferroelectric memoryINST OF MICROELECTRONICS CAS·Filed 2020·Granted Dec 9, 2025·0 cites·7 claims
- 1251US8735245B2Metal oxide resistive switching memory and method for manufacturing sameLV HANGBING·Filed 2011·Granted May 27, 2014·1 cites·19 claims
- 1350US2024206189A1Ferroelectric memory and forming method thereof, and electronic deviceHUAWEI TECH CO LTD·Filed 2024·Application pending·0 cites
- 1449US2021296579A1Resistive random access memory and method for preparing the sameINST OF MICROELECTRONICS CAS·Filed 2018·Application pending·0 cites
- 1548US12423564B2Neuron circuit and neural network circuitINST OF MICROELECTRONICS CAS·Filed 2018·Granted Sep 23, 2025·0 cites·20 claims
- 1646US11223013B2Conductive bridge semiconductor component and manufacturing method thereforINST OF MICROELECTRONICS CAS·Filed 2017·Granted Jan 11, 2022·0 cites·15 claims
- 1745US12205630B2Symmetric memory cell and BNN circuitINST OF MICROELECTRONICS CAS·Filed 2020·Granted Jan 21, 2025·0 cites·14 claims
- 1845US11776607B2Fusion memoryINST OF MICROELECTRONICS CAS·Filed 2019·Granted Oct 3, 2023·0 cites·12 claims
- 1945US10418549B2Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memoryINST OF MICROELECTRONICS CAS·Filed 2016·Granted Sep 17, 2019·0 cites·7 claims
- 2044US2023335215A1Device and method for testing fatigue characteristics of selectorINST OF MICROELECTRONICS CHINSE ACADEMY OF SCIENCES·Filed 2020·Application pending·0 cites
- 2143US12406177B2Afferent neuron circuit and mechanoreceptive systemINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2019·Granted Sep 2, 2025·0 cites·8 claims
- 2243US12124945B2Neural network operation deviceINST OF MICROELECTRONICS CAS·Filed 2019·Granted Oct 22, 2024·0 cites·9 claims
- 2342US2022320424A1Selector and preparation method thereofINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2020·Application pending·0 cites
- 2441US11641787B2Self-rectifying resistive memory and fabrication method thereofINST OF MICROELECTRONICS CAS·Filed 2018·Granted May 2, 2023·0 cites·2 claims
- 2540US10700276B2Preparation method of Cu-based resistive random access memory, and memoryTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted Jun 30, 2020·0 cites·9 claims
- 2640US2024023469A1Resistive random access memory and method of preparing the sameINST OF MICROELECTRONICS CAS·Filed 2020·Application pending·0 cites
- 2739US11205750B21S1R memory integrated structure with larger selector surface area which can effectively suppress leakage current in the cross array without increasing the overall size of the integrated structure and method for fabricating the sameINST OF MICROELECTRONICS CAS·Filed 2020·Granted Dec 21, 2021·0 cites·7 claims
- 2839US10305035B2Preparation method of Cu-based resistive random access memoryTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted May 28, 2019·0 cites·13 claims
- 2938US12260911B2Memory circuit structure and method of operating memory circuit structureINST OF MICROELECTRONICS CAS·Filed 2021·Granted Mar 25, 2025·0 cites·10 claims
- 3038US10134983B2Nonvolatile resistive switching memory device and manufacturing method thereofINST OF MICROELECTRONICS CAS·Filed 2015·Granted Nov 20, 2018·0 cites·16 claims
- 3138US2022122997A1MemoryINST OF MICROELECTRONICS CAS·Filed 2019·Application pending·0 cites
- 3238US2020058704A1Selector based on transition metal oxide and preparation method thereforINST OF MICROELECTRONICS CAS·Filed 2017·Application pending·0 cites
- 3337US12444463B2Memory cell structure, memory array structure, and voltage biasing methodINST OF MICROELECTRONICS CAS·Filed 2020·Granted Oct 14, 2025·0 cites·11 claims
- 3437US12431175B2Self-reference storage structure and in-memory computing circuitINST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES·Filed 2021·Granted Sep 30, 2025·0 cites·8 claims
- 3537US10665780B2Selection device for use in bipolar resistive memory and manufacturing method thereforINST OF MICROELECTRONICS CAS·Filed 2016·Granted May 26, 2020·0 cites·8 claims
- 3636US12456516B2Method for operating memory cell and resistive random access memory, and electronic deviceINST OF MICROELECTRONICS CAS·Filed 2021·Granted Oct 28, 2025·0 cites·9 claims
- 3735US12002500B2Writing method and erasing method of fusion memoryINST OF MICROELECTRONICS CAS·Filed 2019·Granted Jun 4, 2024·0 cites·15 claims
- 3834US2019006584A1Method for improving endurance performance of 3d integrated resistive switching memoryINST OF MICROELECTRONICS CAS·Filed 2016·Application pending·0 cites
- 3933US11101321B2Nonvolatile resistive memory device and manufacturing method thereofINST OF MICROELECTRONICS CAS·Filed 2015·Granted Aug 24, 2021·0 cites·10 claims
- 4033US10312439B2Manufacturing method for a nonvolatile resistive switching memory deviceINST OF MICROELECTRONICS CAS·Filed 2015·Granted Jun 4, 2019·0 cites·6 claims
- 4132US10720578B2Self-gating resistive storage device having resistance transition layer in vertical trench in stacked structure of insulating dielectric layers and electrodesTHE INST OF MICROELECTRONICS OF CHINESE ACADEMY OF SCIENCES·Filed 2016·Granted Jul 21, 2020·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →