Assignee
TODA HARUKI
JP·29 granted patents·2 pending applications·205 citations·filing 2003–2012
Top patents by PatentIndex Score
31 records- 0197US8102699B2Phase change memory deviceTODA HARUKI·Filed 2010·Granted Jan 24, 2012·26 cites·20 claims
- 0293US8269207B2Memory device having variable resistance memory cells disposed at crosspoint of wiringsTODA HARUKI·Filed 2011·Granted Sep 18, 2012·14 cites·20 claims
- 0393US8237143B2Phase change memory deviceTODA HARUKI·Filed 2011·Granted Aug 7, 2012·14 cites·18 claims
- 0488US8537595B2Resistance change memory deviceTODA HARUKI·Filed 2011·Granted Sep 17, 2013·10 cites·18 claims
- 0588US8258496B2Semiconductor integrated circuit device having memory cells disposed at cross point of metal lines and method for fabricating the sameTODA HARUKI·Filed 2009·Granted Sep 4, 2012·25 cites·8 claims
- 0686US8665632B2Semiconductor memory deviceTODA HARUKI·Filed 2012·Granted Mar 4, 2014·8 cites·20 claims
- 0786US8102697B2Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell arrayTODA HARUKI·Filed 2010·Granted Jan 24, 2012·7 cites·9 claims
- 0884US8468434B2Error detection and correction system including a syndrome element calculating unitTODA HARUKI·Filed 2011·Granted Jun 18, 2013·9 cites·20 claims
- 0984US8184470B2Resistance change memory device and programming method thereofTODA HARUKI·Filed 2008·Granted May 22, 2012·15 cites·7 claims
- 1082US8194434B2Resistance change memory deviceTODA HARUKI·Filed 2009·Granted Jun 5, 2012·12 cites·19 claims
- 1181US8717804B2Three dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell arrayTODA HARUKI·Filed 2011·Granted May 6, 2014·5 cites·5 claims
- 1280US8413013B2Memory systemTODA HARUKI·Filed 2009·Granted Apr 2, 2013·10 cites·17 claims
- 1377US8392770B2Resistance change memory device having high-speed two-step write modeTODA HARUKI·Filed 2010·Granted Mar 5, 2013·6 cites·23 claims
- 1475US8687406B2Semiconductor memory device and method of controlling the sameTODA HARUKI·Filed 2012·Granted Apr 1, 2014·5 cites·20 claims
- 1575US8315082B2Resistance-changing memory deviceTODA HARUKI·Filed 2012·Granted Nov 20, 2012·4 cites·13 claims
- 1675US8243493B2Resistance change memory deviceTODA HARUKI·Filed 2008·Granted Aug 14, 2012·9 cites·16 claims
- 1774US8897059B2Resistance change memory device that stores a reversible resistance value as dataTODA HARUKI·Filed 2011·Granted Nov 25, 2014·4 cites·16 claims
- 1874US8448051B2Memory system and method of data writing and reading in memory systemsTODA HARUKI·Filed 2011·Granted May 21, 2013·5 cites·18 claims
- 1971US8291303B2Memory device with error correction system for detection and correction errors in read out dataTODA HARUKI·Filed 2008·Granted Oct 16, 2012·7 cites·13 claims
- 2069US8661319B2Memory systemTODA HARUKI·Filed 2011·Granted Feb 25, 2014·2 cites·20 claims
- 2167US8595592B2Memory systemTODA HARUKI·Filed 2011·Granted Nov 26, 2013·3 cites·20 claims
- 2264US8201055B2Semiconductor memory deviceTODA HARUKI·Filed 2011·Granted Jun 12, 2012·1 cites·12 claims
- 2363US8959415B2Memory system and memory controllerTODA HARUKI·Filed 2011·Granted Feb 17, 2015·2 cites·6 claims
- 2450US9700464B2Absorbent articleTODA HARUKI·Filed 2011·Granted Jul 11, 2017·1 cites·21 claims
- 2549US8174864B2Resistance-changing memory deviceTODA HARUKI·Filed 2008·Granted May 8, 2012·1 cites·20 claims
- 2647US8819331B2Memory system and memory controllerTODA HARUKI·Filed 2012·Granted Aug 26, 2014·0 cites·21 claims
- 2747US8559211B2Phase change memory deviceTODA HARUKI·Filed 2011·Granted Oct 15, 2013·0 cites·8 claims
- 2843US9214226B2Semiconductor memory deviceTODA HARUKI·Filed 2012·Granted Dec 15, 2015·0 cites·4 claims
- 2943US8400816B2Resistance change memory deviceTODA HARUKI·Filed 2011·Granted Mar 19, 2013·0 cites·19 claims
- 3041US2012310195A1Disposable wearing articleTODA HARUKI·Filed 2011·Application pending·0 cites
- 3135US2006203541A1Phase change memory deviceTODA HARUKI·Filed 2003·Application pending·0 cites
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