Assignee
YAEGASHI TOSHITAKE
JP·20 granted patents·5 pending applications·23 citations·filing 2007–2012
Top patents by PatentIndex Score
25 records- 0184US8222687B2Nonvolatile semiconductor storage device and method of manufacture thereofYAEGASHI TOSHITAKE·Filed 2009·Granted Jul 17, 2012·7 cites·19 claims
- 0279US8569828B2Nonvolatile semiconductor storage device and method of manufacture thereofYAEGASHI TOSHITAKE·Filed 2012·Granted Oct 29, 2013·3 cites·19 claims
- 0375US8211767B2Nonvolatile semiconductor memory and manufacturing method thereofYAEGASHI TOSHITAKE·Filed 2011·Granted Jul 3, 2012·3 cites·4 claims
- 0472US8541827B2Semiconductor memory device including multi-layer gate structureYAEGASHI TOSHITAKE·Filed 2012·Granted Sep 24, 2013·1 cites·12 claims
- 0571US8324674B2Semiconductor memory device including multi-layer gate structureYAEGASHI TOSHITAKE·Filed 2012·Granted Dec 4, 2012·1 cites·17 claims
- 0670US8455937B2Nonvolatile semiconductor memory device in which decrease in coupling ratio of memory cells is suppressedYAEGASHI TOSHITAKE·Filed 2009·Granted Jun 4, 2013·2 cites·5 claims
- 0770US8338252B2Non-volatile semiconductor memory device and method of manufacturing the sameYAEGASHI TOSHITAKE·Filed 2010·Granted Dec 25, 2012·1 cites·15 claims
- 0870US8304826B2Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodesYAEGASHI TOSHITAKE·Filed 2010·Granted Nov 6, 2012·2 cites·6 claims
- 0970US8134200B2Nonvolatile semiconductor memory including a gate insulating film and an inter-gate insulating filmYAEGASHI TOSHITAKE·Filed 2008·Granted Mar 13, 2012·3 cites·21 claims
- 1057US8330203B2Nonvolatile semiconductor memory device in which decrease in coupling ratio of memory cells is suppressedYAEGASHI TOSHITAKE·Filed 2009·Granted Dec 11, 2012·0 cites·13 claims
- 1156US8536657B2Non-volatile semiconductor memory device and process of manufacturing the sameYAEGASHI TOSHITAKE·Filed 2012·Granted Sep 17, 2013·0 cites·15 claims
- 1256US8202774B2Semiconductor memory device including multi-layer gate structureYAEGASHI TOSHITAKE·Filed 2011·Granted Jun 19, 2012·0 cites·15 claims
- 1354US8728903B2Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrodeYAEGASHI TOSHITAKE·Filed 2012·Granted May 20, 2014·0 cites·5 claims
- 1454US8698225B2Non-volatile semiconductor memory device and its manufacturing methodYAEGASHI TOSHITAKE·Filed 2011·Granted Apr 15, 2014·0 cites·15 claims
- 1553US8648405B2Nonvolatile semiconductor memory device including memory cells formed to have double-layered gate electrodesYAEGASHI TOSHITAKE·Filed 2012·Granted Feb 11, 2014·0 cites·11 claims
- 1653US8330204B2Non-volatile NAND memory semiconductor integrated circuitYAEGASHI TOSHITAKE·Filed 2011·Granted Dec 11, 2012·0 cites·12 claims
- 1752US8723246B2Nonvolatile semiconductor memory and manufacturing method thereofYAEGASHI TOSHITAKE·Filed 2012·Granted May 13, 2014·0 cites·16 claims
- 1852US8217468B2Non-volatile semiconductor memory device and process of manufacturing the sameYAEGASHI TOSHITAKE·Filed 2011·Granted Jul 10, 2012·0 cites·22 claims
- 1951US8735966B2Nonvolatile semiconductor memory device and manufacturing method thereofYAEGASHI TOSHITAKE·Filed 2011·Granted May 27, 2014·0 cites·12 claims
- 2051US8258568B2Semiconductor device having an oxide film formed on a semiconductor substrate sidewall of an element region and on a sidewall of a gate electrodeYAEGASHI TOSHITAKE·Filed 2011·Granted Sep 4, 2012·0 cites·14 claims
- 2151US2007176224A1Nonvolatile semiconductor memory device in which decrease in coupling ratio of memory cells is suppressedYAEGASHI TOSHITAKE·Filed 2007·Application pending·0 cites
- 2249US2012235226A1Nonvolatile semiconductor memoryYAEGASHI TOSHITAKE·Filed 2012·Application pending·0 cites
- 2349US2012139029A1Nonvolatile semiconductor memoryYAEGASHI TOSHITAKE·Filed 2012·Application pending·0 cites
- 2446US2009283820A1Non-volatile semiconductor memory deviceYAEGASHI TOSHITAKE·Filed 2009·Application pending·0 cites
- 2545US2009230460A1Nonvolatile semiconductor memoryYAEGASHI TOSHITAKE·Filed 2009·Application pending·0 cites
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