Assignee
ASM JAPAN
JP·159 granted patents·53 pending applications·24,724 citations·filing 1991–2014
Top patents by PatentIndex Score
212 records- 0199US9171716B2Method of forming metal oxide hardmaskASM JAPAN·Filed 2014·Granted Oct 27, 2015·531 cites·20 claims
- 0299US8041450B2Position sensor system for substrate transfer robotASM JAPAN·Filed 2007·Granted Oct 18, 2011·531 cites·26 claims
- 0399US8003174B2Method for forming dielectric film using siloxane-silazane mixtureASM JAPAN·Filed 2007·Granted Aug 23, 2011·521 cites·14 claims
- 0499USD643055SHeater block for use in a semiconductor processing toolASM JAPAN·Filed 2008·Granted Aug 9, 2011·524 cites·1 claims
- 0599US7972980B2Method of forming conformal dielectric film having Si-N bonds by PECVDASM JAPAN·Filed 2010·Granted Jul 5, 2011·563 cites·20 claims
- 0699US7955650B2Method for forming dielectric film using porogen gasASM JAPAN·Filed 2007·Granted Jun 7, 2011·464 cites·17 claims
- 0799US7919416B2Method of forming conformal dielectric film having Si-N bonds by PECVDASM JAPAN·Filed 2009·Granted Apr 5, 2011·598 cites·20 claims
- 0899US7842622B1Method of forming highly conformal amorphous carbon layerASM JAPAN·Filed 2009·Granted Nov 30, 2010·524 cites·17 claims
- 0999US7807566B2Method for forming dielectric SiOCH film having chemical stabilityASM JAPAN·Filed 2007·Granted Oct 5, 2010·464 cites·17 claims
- 1099US7622369B1Device isolation technology on semiconductor substrateASM JAPAN·Filed 2008·Granted Nov 24, 2009·604 cites·16 claims
- 1199US7021881B2Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sectionsASM JAPAN·Filed 2004·Granted Apr 4, 2006·545 cites·31 claims
- 1299US6955741B2Semiconductor-processing reaction chamberASM JAPAN·Filed 2002·Granted Oct 18, 2005·380 cites·2 claims
- 1399US6899507B2Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sectionsASM JAPAN·Filed 2002·Granted May 31, 2005·561 cites·15 claims
- 1499US6662817B2Gas-line system for semiconductor-manufacturing apparatusASM JAPAN·Filed 2001·Granted Dec 16, 2003·496 cites·20 claims
- 1599US6455445B2Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 2001·Granted Sep 24, 2002·645 cites·18 claims
- 1699US6435798B1Semiconductor processing apparatus with substrate-supporting mechanismASM JAPAN·Filed 2000·Granted Aug 20, 2002·641 cites·20 claims
- 1799US6410463B1Method for forming film with low dielectric constant on semiconductor substrateASM JAPAN·Filed 2000·Granted Jun 25, 2002·615 cites·10 claims
- 1898US7963736B2Wafer processing apparatus with wafer alignment deviceASM JAPAN·Filed 2008·Granted Jun 21, 2011·539 cites·16 claims
- 1998US7789965B2Method of cleaning UV irradiation chamberASM JAPAN·Filed 2007·Granted Sep 7, 2010·527 cites·7 claims
- 2098US7781352B2Method for forming inorganic silazane-based dielectric filmASM JAPAN·Filed 2007·Granted Aug 24, 2010·480 cites·14 claims
- 2198US7763869B2UV light irradiating apparatus with liquid filterASM JAPAN·Filed 2007·Granted Jul 27, 2010·507 cites·14 claims
- 2298US7651959B2Method for forming silazane-based dielectric filmASM JAPAN·Filed 2007·Granted Jan 26, 2010·589 cites·25 claims
- 2398US7632549B2Method of forming a high transparent carbon filmASM JAPAN·Filed 2008·Granted Dec 15, 2009·520 cites·14 claims
- 2498US7618226B2Semiconductor substrate transfer apparatus and semiconductor substrate processing apparatus equipped with the sameASM JAPAN·Filed 2006·Granted Nov 17, 2009·538 cites·18 claims
- 2598US7582575B2Method for forming insulation filmASM JAPAN·Filed 2005·Granted Sep 1, 2009·467 cites·18 claims
- 2698US7501292B2Method for managing UV irradiation for curing semiconductor substrateASM JAPAN·Filed 2007·Granted Mar 10, 2009·525 cites·17 claims
- 2798US7425350B2Apparatus, precursors and deposition methods for silicon-containing materialsASM JAPAN·Filed 2005·Granted Sep 16, 2008·88 cites·62 claims
- 2898US7354873B2Method for forming insulation filmASM JAPAN·Filed 2006·Granted Apr 8, 2008·479 cites·40 claims
- 2998US7234476B2Method of cleaning CVD equipment processing chamberASM JAPAN·Filed 2003·Granted Jun 26, 2007·523 cites·9 claims
- 3098US6458718B1Fluorine-containing materials and processesASM JAPAN·Filed 2001·Granted Oct 1, 2002·275 cites·47 claims
- 3197US7833353B2Liquid material vaporization apparatus for semiconductor processing apparatusASM JAPAN·Filed 2007·Granted Nov 16, 2010·562 cites·19 claims
- 3297US7712435B2Plasma processing apparatus with insulated gas inlet poreASM JAPAN·Filed 2005·Granted May 11, 2010·426 cites·25 claims
- 3397US7408225B2Apparatus and method for forming thin film using upstream and downstream exhaust mechanismsASM JAPAN·Filed 2004·Granted Aug 5, 2008·406 cites·29 claims
- 3497US6921556B2Method of film deposition using single-wafer-processing type CVDASM JAPAN·Filed 2003·Granted Jul 26, 2005·256 cites·11 claims
- 3597US6630413B2CVD syntheses of silicon nitride materialsASM JAPAN·Filed 2001·Granted Oct 7, 2003·162 cites·12 claims
- 3697US6559520B2Siloxan polymer film on semiconductor substrateASM JAPAN·Filed 2002·Granted May 6, 2003·87 cites·3 claims
- 3797US6383955B1Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 1999·Granted May 7, 2002·857 cites·13 claims
- 3897US6352945B1Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 1999·Granted Mar 5, 2002·718 cites·12 claims
- 3997US6187691B1Method of forming film on semiconductor substrate in film-forming apparatusASM JAPAN·Filed 2000·Granted Feb 13, 2001·538 cites·11 claims
- 4097US6159301ASubstrate holding apparatus for processing semiconductorASM JAPAN·Filed 1998·Granted Dec 12, 2000·303 cites·7 claims
- 4196US7825040B1Method for depositing flowable material using alkoxysilane or aminosilane precursorASM JAPAN·Filed 2009·Granted Nov 2, 2010·545 cites·14 claims
- 4296US7691205B2Substrate-supporting deviceASM JAPAN·Filed 2005·Granted Apr 6, 2010·521 cites·19 claims
- 4396US7690881B2Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatusASM JAPAN·Filed 2006·Granted Apr 6, 2010·523 cites·15 claims
- 4496US7504344B2Method of forming a carbon polymer film using plasma CVDASM JAPAN·Filed 2005·Granted Mar 17, 2009·419 cites·31 claims
- 4596US7476618B2Selective formation of metal layers in an integrated circuitASM JAPAN·Filed 2005·Granted Jan 13, 2009·126 cites·45 claims
- 4696US7273526B2Thin-film deposition apparatusASM JAPAN·Filed 2004·Granted Sep 25, 2007·90 cites·31 claims
- 4796US6432846B1Silicone polymer insulation film on semiconductor substrate and method for forming the filmASM JAPAN·Filed 2000·Granted Aug 13, 2002·125 cites·6 claims
- 4895US7638003B2Semiconductor processing apparatus with lift pin structureASM JAPAN·Filed 2006·Granted Dec 29, 2009·21 cites·20 claims
- 4995US7435484B2Ruthenium thin film-formed structureASM JAPAN·Filed 2006·Granted Oct 14, 2008·27 cites·11 claims
- 5095US6949456B2Method for manufacturing semiconductor device having porous structure with air-gapsASM JAPAN·Filed 2003·Granted Sep 27, 2005·89 cites·21 claims
Showing the top 50 of 212 patent records by PatentIndex Score.
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