Assignee
BELL SEMICONDUCTOR LLC
US·7 granted patents·1 pending application·2 citations·filing 2019–2024
Top patents by PatentIndex Score
8 records- 0193US11587928B2Method to induce strain in finFET channels from an adjacent regionBELL SEMICONDUCTOR LLC·Filed 2020·Granted Feb 21, 2023·2 cites·14 claims
- 0289US12191309B2Method to induce strain in finFET channels from an adjacent regionBELL SEMICONDUCTOR LLC·Filed 2024·Granted Jan 7, 2025·0 cites·22 claims
- 0384US12278234B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsBELL SEMICONDUCTOR LLC·Filed 2023·Granted Apr 15, 2025·0 cites·21 claims
- 0483US11948943B2Method to induce strain in FINFET channels from an adjacent regionBELL SEMICONDUCTOR LLC·Filed 2023·Granted Apr 2, 2024·0 cites·26 claims
- 0581US2023260846A1METHOD TO CO-INTEGRATE SiGe AND Si CHANNELS FOR FINFET DEVICESBELL SEMICONDUCTOR LLC·Filed 2023·Application pending·0 cites
- 0680US12408368B2Method of making a semiconductor device using a dummy gateBELL SEMICONDUCTOR LLC·Filed 2022·Granted Sep 2, 2025·0 cites·15 claims
- 0778US11610886B2Multi-fin FINFET device including epitaxial growth barrier on outside surfaces of outermost fins and related methodsBELL SEMICONDUCTOR LLC·Filed 2021·Granted Mar 21, 2023·0 cites·20 claims
- 0866US11670554B2Method to co-integrate SiGe and Si channels for finFET devicesBELL SEMICONDUCTOR LLC·Filed 2019·Granted Jun 6, 2023·0 cites·18 claims
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