Assignee
CAPPELLANI ANNALISA
US·11 granted patents·1 pending application·156 citations·filing 2009–2016
Top patents by PatentIndex Score
12 records- 0197US8313999B2Multi-gate semiconductor device with self-aligned epitaxial source and drainCAPPELLANI ANNALISA·Filed 2009·Granted Nov 20, 2012·70 cites·14 claims
- 0296US8735869B2Strained gate-all-around semiconductor devices formed on globally or locally isolated substratesCAPPELLANI ANNALISA·Filed 2012·Granted May 27, 2014·22 cites·18 claims
- 0394US9608059B2Semiconductor device with isolated body portionCAPPELLANI ANNALISA·Filed 2011·Granted Mar 28, 2017·18 cites·28 claims
- 0493US9129827B2Conversion of strain-inducing buffer to electrical insulatorCAPPELLANI ANNALISA·Filed 2012·Granted Sep 8, 2015·12 cites·25 claims
- 0590US9041106B2Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substratesCAPPELLANI ANNALISA·Filed 2012·Granted May 26, 2015·9 cites·24 claims
- 0686US9559160B2Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or compositionCAPPELLANI ANNALISA·Filed 2011·Granted Jan 31, 2017·5 cites·15 claims
- 0785US10424580B2Semiconductor devices having modulated nanowire countsCAPPELLANI ANNALISA·Filed 2011·Granted Sep 24, 2019·6 cites·25 claims
- 0884US9484272B2Methods for fabricating strained gate-all-around semiconductor devices by fin oxidation using an undercut etch-stop layerCAPPELLANI ANNALISA·Filed 2014·Granted Nov 1, 2016·4 cites·6 claims
- 0977US9029221B2Semiconductor devices having three-dimensional bodies with modulated heightsCAPPELLANI ANNALISA·Filed 2011·Granted May 12, 2015·4 cites·26 claims
- 1074US9425212B2Isolated and bulk semiconductor devices formed on a same bulk substrateCAPPELLANI ANNALISA·Filed 2012·Granted Aug 23, 2016·3 cites·14 claims
- 1174US8507948B2Junctionless accumulation-mode devices on prominent architectures, and methods of making sameCAPPELLANI ANNALISA·Filed 2010·Granted Aug 13, 2013·3 cites·17 claims
- 1251US2017025499A1Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substratesCAPPELLANI ANNALISA·Filed 2016·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →