Assignee
CHAN KEVIN K
US·17 granted patents·3 pending applications·73 citations·filing 2008–2013
Top patents by PatentIndex Score
20 records- 0194US8492234B2Field effect transistor deviceCHAN KEVIN K·Filed 2010·Granted Jul 23, 2013·16 cites·12 claims
- 0292US8551845B2Structure and method for increasing strain in a deviceCHAN KEVIN K·Filed 2010·Granted Oct 8, 2013·12 cites·15 claims
- 0389US8410544B2finFETs and methods of making sameCHAN KEVIN K·Filed 2011·Granted Apr 2, 2013·10 cites·20 claims
- 0486US8299535B2Delta monolayer dopants epitaxy for embedded source/drain silicideCHAN KEVIN K·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 0584US8431994B2Thin-BOX metal backgate extremely thin SOI deviceCHAN KEVIN K·Filed 2010·Granted Apr 30, 2013·6 cites·13 claims
- 0681US8946028B2Merged FinFETs and method of manufacturing the sameCHAN KEVIN K·Filed 2009·Granted Feb 3, 2015·8 cites·18 claims
- 0776US8580635B2Method of replacing silicon with metal in integrated circuit chip fabricationCHAN KEVIN K·Filed 2011·Granted Nov 12, 2013·3 cites·21 claims
- 0875US9105741B2Method of replacement source/drain for 3D CMOS transistorsCHAN KEVIN K·Filed 2012·Granted Aug 11, 2015·4 cites·13 claims
- 0968US8716096B2Self-aligned emitter-base in advanced BiCMOS technologyCHAN KEVIN K·Filed 2011·Granted May 6, 2014·2 cites·13 claims
- 1067US9048261B2Fabrication of field-effect transistors with atomic layer dopingCHAN KEVIN K·Filed 2011·Granted Jun 2, 2015·1 cites·13 claims
- 1166US8236660B2Monolayer dopant embedded stressor for advanced CMOSCHAN KEVIN K·Filed 2010·Granted Aug 7, 2012·2 cites·5 claims
- 1255US9287136B2FinFET field-effect transistors with atomic layer dopingCHAN KEVIN K·Filed 2012·Granted Mar 15, 2016·0 cites·5 claims
- 1352US8927357B2Junction field-effect transistor with raised source and drain regions formed by selective epitaxyCHAN KEVIN K·Filed 2011·Granted Jan 6, 2015·0 cites·12 claims
- 1452US8603883B2Interface control in a bipolar junction transistorCHAN KEVIN K·Filed 2011·Granted Dec 10, 2013·0 cites·11 claims
- 1551US2014015051A1Method of replacing silicon with metal in integrated circuit chip fabricationCHAN KEVIN K·Filed 2013·Application pending·0 cites
- 1648US8492237B2Methods of fabricating a bipolar junction transistor with a self-aligned emitter and baseCHAN KEVIN K·Filed 2011·Granted Jul 23, 2013·0 cites·19 claims
- 1748US8421191B2Monolayer dopant embedded stressor for advanced CMOSCHAN KEVIN K·Filed 2012·Granted Apr 16, 2013·0 cites·14 claims
- 1842US2009242989A1Complementary metal-oxide-semiconductor device with embedded stressorCHAN KEVIN K·Filed 2008·Application pending·0 cites
- 1938US2012190216A1Annealing techniques for high performance complementary metal oxide semiconductor (cmos) device fabricationCHAN KEVIN K·Filed 2011·Application pending·0 cites
- 2037US8765532B2Fabrication of field effect devices using spacersCHAN KEVIN K·Filed 2010·Granted Jul 1, 2014·0 cites·18 claims
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