Assignee
CHUNG SUK-JIN
KR·1 granted patent·2 pending applications·8 citations·filing 2006–2012
Top patents by PatentIndex Score
3 records- 0183US9076647B2Method of forming an oxide layer and method of manufacturing semiconductor device including the oxide layerCHUNG SUK-JIN·Filed 2012·Granted Jul 7, 2015·8 cites·21 claims
- 0240US2006138511A1Methods of manufacturing a capacitor including a cavity containing a buried layerCHUNG SUK-JIN·Filed 2006·Application pending·0 cites
- 0333US2011095397A1Semiconductor Structures Including Dielectric Layers and Capacitors Including Semiconductor StructuresCHUNG SUK-JIN·Filed 2010·Application pending·0 cites
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