Assignee
COMMISSARIAT ENERGIE ATOMIQUE
FR·6,257 granted patents·1,524 pending applications·69,348 citations·filing 1970–2025
Top patents by PatentIndex Score
7,781 records- 0199US5714395AProcess for the manufacture of thin films of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1996·Granted Feb 3, 1998·525 cites·6 claims
- 0299US5374564AProcess for the production of thin semiconductor material filmsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1992·Granted Dec 20, 1994·2k cites·9 claims
- 0398US9601542B2P-N junction optoelectronic device for ionizing dopants by field effectCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Mar 21, 2017·31 cites·18 claims
- 0498US8013399B2SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustableCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Granted Sep 6, 2011·232 cites·21 claims
- 0598US7989056B2Hydrophobic surface coating with low wetting hysteresis, method for depositing same, microcomponent and useCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Aug 2, 2011·89 cites·26 claims
- 0698US7910419B2SOI transistor with self-aligned ground plane and gate and buried oxide of variable thicknessCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2009·Granted Mar 22, 2011·110 cites·19 claims
- 0798USRE39484EProcess for the production of thin semiconductor material filmsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Feb 6, 2007·305 cites·70 claims
- 0898US7067396B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jun 27, 2006·309 cites·16 claims
- 0998US6950335B2Magnetic tunnel junction magnetic device, memory and writing and reading methods using said deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Sep 27, 2005·164 cites·17 claims
- 1098US6809009B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Oct 26, 2004·363 cites·16 claims
- 1198US6809044B1Method for making a thin film using pressurizationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Oct 26, 2004·184 cites·20 claims
- 1298US6756286B1Method for transferring a thin film comprising a step of generating inclusionsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Jun 29, 2004·263 cites·19 claims
- 1398US6603677B2Three-layered stacked magnetic spin polarization device with memoryCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Aug 5, 2003·329 cites·11 claims
- 1498US6532164B2Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Mar 11, 2003·359 cites·24 claims
- 1598US6103597AMethod of obtaining a thin film of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Aug 15, 2000·399 cites·11 claims
- 1698US6020252AMethod of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1997·Granted Feb 1, 2000·619 cites·15 claims
- 1798US4949207APlanar structure thin film magnetic headCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1989·Granted Aug 14, 1990·97 cites·2 claims
- 1898US4283165AMotorized manipulator of the cable transmission type having an increased field of actionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1979·Granted Aug 11, 1981·116 cites·13 claims
- 1997US9741879B2SPAD photodiode covered with a networkCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Aug 22, 2017·42 cites·17 claims
- 2097US9263633B2Nanowire-based optoelectronic device for light-emissionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Feb 16, 2016·30 cites·22 claims
- 2197US9093607B2Nanowire-based optoelectronic device for light emissionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Jul 28, 2015·41 cites·6 claims
- 2297US8817257B2Method for reconstructing the optical properties of a medium using a combination of a plurality of mellin-laplace transforms of a magnitude comprising a time distribution of a received signal, and associated reconstruction systemCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Aug 26, 2014·62 cites·15 claims
- 2397US8342207B2Making a liquid/liquid or gas system in microfluidicsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jan 1, 2013·81 cites·25 claims
- 2497US7957381B2Globally asynchronous communication architecture for system on chipCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 7, 2011·268 cites·32 claims
- 2597US7935559B1Method for producing a non-planar microelectronic component using a cavityCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2010·Granted May 3, 2011·33 cites·8 claims
- 2697US7754384B2High-voltage positive electrode material having a spinel structure based on nickel and manganese for lithium cell batteriesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted Jul 13, 2010·36 cites·18 claims
- 2797US7531072B2Device for controlling the displacement of a drop between two or several solid substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted May 12, 2009·111 cites·31 claims
- 2897US7498234B2Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Mar 3, 2009·34 cites·26 claims
- 2997US6946365B2Method for producing a thin film comprising introduction of gaseous speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Sep 20, 2005·163 cites·19 claims
- 3097US6303468B1Method for making a thin film of solid materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Oct 16, 2001·271 cites·19 claims
- 3197US6225192B1Method of producing a thin layer of semiconductor materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted May 1, 2001·234 cites·30 claims
- 3297US5194780AElectron source with microtip emissive cathodesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1991·Granted Mar 16, 1993·194 cites·17 claims
- 3397US4908539ADisplay unit by cathodoluminescence excited by field emissionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1988·Granted Mar 13, 1990·157 cites·8 claims
- 3497US4809103AHead slider with an integrated flat magnetic headCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1987·Granted Feb 28, 1989·88 cites·1 claims
- 3597US4701028ALiquid crystal cell which can have a homeotropic structure with compensated birefringence of said structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1985·Granted Oct 20, 1987·219 cites·10 claims
- 3697US4614937ACapacitive keyboard structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1983·Granted Sep 30, 1986·96 cites·11 claims
- 3796US11384789B2Out-of-plane hinge for a micromechanical and/or nanomechanical structure with a reduced sensitivity to internal stressesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jul 12, 2022·6 cites·16 claims
- 3896US10705354B2Method of fabricating a modulator of the propagation losses and of the index of propagation of an optical signalCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Jul 7, 2020·12 cites·14 claims
- 3996US10164608B2Switch with phase change materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Dec 25, 2018·45 cites·14 claims
- 4096US9898032B2Fluid haptic interface with improved haptic rendering using a torque or load sensorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Feb 20, 2018·69 cites·17 claims
- 4196US9899800B2Laser device and process for fabricating such a laser deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Feb 20, 2018·33 cites·17 claims
- 4296US7944231B2Electronic device for the transport of numerical informationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2008·Granted May 17, 2011·48 cites·17 claims
- 4396US7813202B2Thin-film magnetic device with strong spin polarization perpendicular to the plane of the layers, magnetic tunnel junction and spin valve using such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 12, 2010·38 cites·16 claims
- 4496US7600428B2Triaxial membrane accelerometerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 13, 2009·62 cites·17 claims
- 4596US7598145B2Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germaniumCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Oct 6, 2009·53 cites·8 claims
- 4696US5559043AMethod for placing semiconductive plates on a supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1995·Granted Sep 24, 1996·237 cites·10 claims
- 4796US5225820AMicrotip trichromatic fluorescent screenCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1992·Granted Jul 6, 1993·120 cites·7 claims
- 4896US4957349AActive matrix screen for the color display of television pictures, control system and process for producing said screenCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1988·Granted Sep 18, 1990·180 cites·8 claims
- 4996US4940916AElectron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said sourceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1988·Granted Jul 10, 1990·478 cites·8 claims
- 5096US4857161AProcess for the production of a display means by cathodoluminescence excited by field emissionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1987·Granted Aug 15, 1989·206 cites·11 claims
Showing the top 50 of 7,781 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when COMMISSARIAT ENERGIE ATOMIQUE files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →