Assignee
CSMC TECHNOLOGIES FAB1 CO LTD
CN·62 granted patents·8 pending applications·64 citations·filing 2012–2018
Top patents by PatentIndex Score
70 records- 0183US9975766B2MEMS-based method for manufacturing sensorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted May 22, 2018·4 cites·10 claims
- 0283US9953970B2Semiconductor device having ESD protection structureCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Apr 24, 2018·4 cites·6 claims
- 0382US9952609B2Low drop-out regulator circuit, chip and electronic deviceCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Apr 24, 2018·4 cites·12 claims
- 0482US9947785B2Junction field effect transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Apr 17, 2018·5 cites·13 claims
- 0581US9356137B2Power MOS device structureCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted May 31, 2016·11 cites·10 claims
- 0679US9620615B2IGBT manufacturing methodCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Apr 11, 2017·4 cites·8 claims
- 0777US9673193B2Manufacturing method for reverse conducting insulated gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jun 6, 2017·4 cites·10 claims
- 0876US9862595B2Method for manufacturing thin-film support beamCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jan 9, 2018·4 cites·8 claims
- 0975US10084073B2Lateral insulated-gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Sep 25, 2018·3 cites·14 claims
- 1075US9954074B2Insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Apr 24, 2018·4 cites·7 claims
- 1174US10101225B2Pressure sensor with light detection of diaphragm protrusionCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Oct 16, 2018·6 cites·13 claims
- 1274US10077188B2Manufacturing method of MEMS chipCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2017·Granted Sep 18, 2018·1 cites·4 claims
- 1374US9543451B2High voltage junction field effect transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Jan 10, 2017·3 cites·6 claims
- 1466US9443926B2Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Sep 13, 2016·2 cites·10 claims
- 1566US9252240B2Manufacturing method for semiconductor device with discrete field oxide structureCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Feb 2, 2016·2 cites·11 claims
- 1661US8957494B2High-voltage Schottky diode and manufacturing method thereofCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2012·Granted Feb 17, 2015·3 cites·14 claims
- 1752US9580301B2MEMS chip and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Feb 28, 2017·0 cites·3 claims
- 1851US9954431B2Starting circuit of power management chip, and power management chipCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Apr 24, 2018·0 cites·8 claims
- 1950US10816903B2Photolithography method and system based on high step slopeCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2018·Granted Oct 27, 2020·0 cites·16 claims
- 2049US9939724B2Photolithography method and system based on high step slopeCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Apr 10, 2018·0 cites·7 claims
- 2149US9881994B2Insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jan 30, 2018·0 cites·10 claims
- 2249US9607851B2Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structureCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Mar 28, 2017·0 cites·20 claims
- 2348US10818655B2Semiconductor device and related method of adjusting threshold voltage in semiconductor device during manufacture via counter doping in diffusion regionCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Oct 27, 2020·0 cites·11 claims
- 2448US9666682B2Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing methodCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted May 30, 2017·0 cites·9 claims
- 2547US10084036B2Insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2017·Granted Sep 25, 2018·0 cites·7 claims
- 2646US9716169B2Lateral double diffused metal oxide semiconductor field-effect transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jul 25, 2017·0 cites·10 claims
- 2745US10096699B2Field-stop reverse conducting insulated gate bipolar transistor and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Oct 9, 2018·0 cites·10 claims
- 2845US9768292B2Laterally diffused metal oxide semiconductor device and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Sep 19, 2017·0 cites·10 claims
- 2944US9903884B2Parallel plate capacitor and acceleration sensor comprising sameCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Feb 27, 2018·0 cites·8 claims
- 3044US9685386B2Semiconductor test structure for MOSFET noise testingCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Jun 20, 2017·0 cites·11 claims
- 3144US9583587B2Method for manufacturing injection-enhanced insulated-gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Feb 28, 2017·0 cites·10 claims
- 3244US9553164B2Method for manufacturing IGBTCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Jan 24, 2017·0 cites·12 claims
- 3344US9343454B2Electrostatic discharge protection structure and fabrication method thereofCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted May 17, 2016·0 cites·7 claims
- 3444US9006867B2Monitoring structure and monitoring method for silicon wet etching depthCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2012·Granted Apr 14, 2015·0 cites·20 claims
- 3543US10003890B2MEMS microphoneCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Jun 19, 2018·0 cites·14 claims
- 3643US2016240659A1Laterally diffused metal oxide semiconductor device and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Application pending·0 cites
- 3742US9401422B2Trench DMOS device with reduced gate resistance and manufacturing method thereofCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Jul 26, 2016·0 cites·16 claims
- 3842US9397106B2Method for producing MROM memory based on OTP memoryCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Jul 19, 2016·0 cites·8 claims
- 3941US9905680B2Lateral insulated-gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Feb 27, 2018·0 cites·10 claims
- 4041US9780084B2Electrostatic discharge protection structure and fabrication method thereofCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2016·Granted Oct 3, 2017·0 cites·4 claims
- 4141US9728472B2Method for wafer etching in deep silicon trench etching processCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Aug 8, 2017·0 cites·11 claims
- 4241US9590029B2Method for manufacturing insulated gate bipolar transistorCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Mar 7, 2017·0 cites·10 claims
- 4341US9431308B2Critical size compensating method of deep groove etching processCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Granted Aug 30, 2016·0 cites·9 claims
- 4440US9595520B2IGBT with built-in diode and manufacturing method thereforCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Mar 14, 2017·0 cites·8 claims
- 4540US9502534B2Preparation method for power diodeCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Nov 22, 2016·0 cites·10 claims
- 4640US2014373869A1Method for removing solder balls from chipCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2012·Application pending·0 cites
- 4740US2015175409A1Method for fabricating multi-trench structureCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2013·Application pending·0 cites
- 4839US9502497B2Method for preparing power diodeCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2014·Granted Nov 22, 2016·0 cites·10 claims
- 4936US10276430B2Silicon-on-insulator device and intermetallic dielectric layer structure thereof and manufacturing methodCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Apr 30, 2019·0 cites·4 claims
- 5036US10019027B2Direct digital synthesizing method and direct digital synthesizerCSMC TECHNOLOGIES FAB1 CO LTD·Filed 2015·Granted Jul 10, 2018·0 cites·9 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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