Assignee
DORIS BRUCE B
US·32 granted patents·6 pending applications·168 citations·filing 2004–2012
Top patents by PatentIndex Score
38 records- 0195US8471343B2Parasitic capacitance reduction in MOSFET by airgap ildDORIS BRUCE B·Filed 2011·Granted Jun 25, 2013·23 cites·24 claims
- 0294US8564040B1Inversion mode varactorDORIS BRUCE B·Filed 2012·Granted Oct 22, 2013·13 cites·17 claims
- 0391US8703550B2Dual shallow trench isolation liner for preventing electrical shortsDORIS BRUCE B·Filed 2012·Granted Apr 22, 2014·8 cites·11 claims
- 0491US8318568B2Tunnel field effect transistorDORIS BRUCE B·Filed 2010·Granted Nov 27, 2012·11 cites·8 claims
- 0590US8546228B2Strained thin body CMOS device having vertically raised source/drain stressors with single spacerDORIS BRUCE B·Filed 2010·Granted Oct 1, 2013·9 cites·12 claims
- 0689US8222154B2Fin and finFET formation by angled ion implantationDORIS BRUCE B·Filed 2009·Granted Jul 17, 2012·13 cites·24 claims
- 0788US8685809B2Semiconductor structures having improved contact resistanceDORIS BRUCE B·Filed 2012·Granted Apr 1, 2014·7 cites·20 claims
- 0888US8552487B2SOI trench DRAM structure with backside strapDORIS BRUCE B·Filed 2012·Granted Oct 8, 2013·8 cites·13 claims
- 0987US8766353B2Tunnel field effect transistorDORIS BRUCE B·Filed 2012·Granted Jul 1, 2014·6 cites·7 claims
- 1087US8299455B2Semiconductor structures having improved contact resistanceDORIS BRUCE B·Filed 2007·Granted Oct 30, 2012·10 cites·7 claims
- 1186US8492839B2Same-chip multicharacteristic semiconductor structuresDORIS BRUCE B·Filed 2010·Granted Jul 23, 2013·7 cites·18 claims
- 1284US9219129B2Inverted thin channel mosfet with self-aligned expanded source/drainDORIS BRUCE B·Filed 2012·Granted Dec 22, 2015·6 cites·12 claims
- 1382US8673738B2Shallow trench isolation structuresDORIS BRUCE B·Filed 2012·Granted Mar 18, 2014·4 cites·14 claims
- 1482US8187961B2Threshold adjustment for high-K gate dielectric CMOSDORIS BRUCE B·Filed 2009·Granted May 29, 2012·8 cites·9 claims
- 1580US8629504B2Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the sameDORIS BRUCE B·Filed 2012·Granted Jan 14, 2014·4 cites·18 claims
- 1680US8105960B2Self-assembled sidewall spacerDORIS BRUCE B·Filed 2007·Granted Jan 31, 2012·8 cites·19 claims
- 1779US8568604B2CMOS gate structures fabricated by selective oxidationDORIS BRUCE B·Filed 2008·Granted Oct 29, 2013·5 cites·12 claims
- 1877US8860138B2Strained thin body CMOS device having vertically raised source/drain stressors with single spacerDORIS BRUCE B·Filed 2012·Granted Oct 14, 2014·3 cites·8 claims
- 1973US9059243B2Shallow trench isolation structuresDORIS BRUCE B·Filed 2012·Granted Jun 16, 2015·2 cites·12 claims
- 2072US8586439B1Inversion mode varactorDORIS BRUCE B·Filed 2012·Granted Nov 19, 2013·2 cites·19 claims
- 2168US8617956B2Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator deviceDORIS BRUCE B·Filed 2010·Granted Dec 31, 2013·2 cites·13 claims
- 2268US8450807B2MOSFETs with reduced contact resistanceDORIS BRUCE B·Filed 2010·Granted May 28, 2013·2 cites·15 claims
- 2362US9041116B2Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)DORIS BRUCE B·Filed 2012·Granted May 26, 2015·1 cites·10 claims
- 2462US8487355B2Structure and method for compact long-channel FETsDORIS BRUCE B·Filed 2011·Granted Jul 16, 2013·1 cites·16 claims
- 2562US8318574B2SOI trench DRAM structure with backside strapDORIS BRUCE B·Filed 2010·Granted Nov 27, 2012·1 cites·19 claims
- 2654US8569844B2Metal gate CMOS with at least a single gate metal and dual gate dielectricsDORIS BRUCE B·Filed 2008·Granted Oct 29, 2013·0 cites·8 claims
- 2753US8669145B2Method and structure for strained FinFET devicesDORIS BRUCE B·Filed 2004·Granted Mar 11, 2014·4 cites·19 claims
- 2850US2012329232A1Raised Source/Drain Field Effect TransistorDORIS BRUCE B·Filed 2012·Application pending·0 cites
- 2949US8421159B2Raised source/drain field effect transistorDORIS BRUCE B·Filed 2010·Granted Apr 16, 2013·0 cites·3 claims
- 3047US9276079B2Semiconductor device exhibiting reduced parasitics and method for making sameDORIS BRUCE B·Filed 2012·Granted Mar 1, 2016·0 cites·17 claims
- 3147US9184214B2Semiconductor device exhibiting reduced parasitics and method for making sameDORIS BRUCE B·Filed 2011·Granted Nov 10, 2015·0 cites·16 claims
- 3247US8497168B2Structure and method to enhance both NFET and PFET performance using different kinds of stressed layersDORIS BRUCE B·Filed 2011·Granted Jul 30, 2013·0 cites·9 claims
- 3347US2008272437A1Threshold Adjustment for High-K Gate Dielectric CMOSDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 3444US2008217700A1Mobility Enhanced FET DevicesDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 3541US2008277726A1Devices with Metal Gate, High-k Dielectric, and Butted ElectrodesDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 3641US2009039436A1High Performance Metal Gate CMOS with High-K Gate DielectricDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 3736US2008272438A1CMOS Circuits with High-K Gate DielectricDORIS BRUCE B·Filed 2007·Application pending·0 cites
- 3835US9331174B2Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)DORIS BRUCE B·Filed 2010·Granted May 3, 2016·0 cites·20 claims
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