Assignee
FLASHSILICON INC
US·34 granted patents·5 pending applications·137 citations·filing 2006–2024
Top patents by PatentIndex Score
39 records- 0191US8716803B23-D single floating gate non-volatile memory deviceFLASHSILICON INC·Filed 2012·Granted May 6, 2014·14 cites·10 claims
- 0291US7729165B2Self-adaptive and self-calibrated multiple-level non-volatile memoriesFLASHSILICON INC·Filed 2007·Granted Jun 1, 2010·27 cites·11 claims
- 0387US10431308B1Memory cell size reduction for scalable logic gate non-volatile memory arraysFLASHSILICON INC·Filed 2018·Granted Oct 1, 2019·8 cites·24 claims
- 0486US9754668B1Digital perceptronFLASHSILICON INC·Filed 2016·Granted Sep 5, 2017·8 cites·17 claims
- 0586US7733700B2Method and structures for highly efficient hot carrier injection programming for non-volatile memoriesFLASHSILICON INC·Filed 2007·Granted Jun 8, 2010·13 cites·38 claims
- 0684US10147492B1MOSFET threshold voltage sensing scheme for non-volatile memoryFLASHSILICON INC·Filed 2017·Granted Dec 4, 2018·6 cites·15 claims
- 0781US9502113B2Configurable non-volatile content addressable memoryFLASHSILICON INC·Filed 2015·Granted Nov 22, 2016·5 cites·16 claims
- 0879US7400527B2Bit symbol recognition method and structure for multiple bit storage in non-volatile memoriesFLASHSILICON INC·Filed 2006·Granted Jul 15, 2008·10 cites·30 claims
- 0978US7859903B1Methods and structures for reading out non-volatile memory using NVM cells as a load elementFLASHSILICON INC·Filed 2008·Granted Dec 28, 2010·9 cites·30 claims
- 1077US7515465B1Structures and methods to store information representable by a multiple bit binary word in electrically erasable, programmable read-only memories (EEPROM)FLASHSILICON INC·Filed 2006·Granted Apr 7, 2009·10 cites·12 claims
- 1176US8988104B2Multiple-time configurable non-volatile look-up-tableFLASHSILICON INC·Filed 2013·Granted Mar 24, 2015·4 cites·13 claims
- 1275US9082490B2Ultra-low power programming method for N-channel semiconductor non-volatile memoryFLASHSILICON INC·Filed 2013·Granted Jul 14, 2015·5 cites·5 claims
- 1369US12573451B2Four-transistor static random access memory cell with enhanced data retentionFLASHSILICON INC·Filed 2024·Granted Mar 10, 2026·0 cites·15 claims
- 1464US11825652B2Methods of erasing semiconductor non-volatile memoriesFLASHSILICON INC·Filed 2021·Granted Nov 21, 2023·0 cites·8 claims
- 1563US7606069B2Bit-symbol recognition method and structure for multiple-bit storage in non-volatile memoriesFLASHSILICON INC·Filed 2008·Granted Oct 20, 2009·4 cites·30 claims
- 1662US8716138B2Method for fabricating a field side sub-bitline nor flash arrayFLASHSILICON INC·Filed 2013·Granted May 6, 2014·1 cites·18 claims
- 1762US7626868B1Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM)FLASHSILICON INC·Filed 2007·Granted Dec 1, 2009·4 cites·26 claims
- 1862US2025386492A1Graded channel devices for nor flash cell array and method of fabricating the sameFLASHSILICON INC·Filed 2024·Application pending·0 cites
- 1960US9595330B2Configurable non-volatile content addressable memoryFLASHSILICON INC·Filed 2016·Granted Mar 14, 2017·1 cites·16 claims
- 2060US8879323B2Interconnection matrix using semiconductor non-volatile memoryFLASHSILICON INC·Filed 2012·Granted Nov 4, 2014·2 cites·23 claims
- 2157US11201162B2Methods of erasing semiconductor non-volatile memoriesFLASHSILICON INC·Filed 2018·Granted Dec 14, 2021·0 cites·9 claims
- 2257US7995398B2Structures and methods for reading out non-volatile memoriesFLASHSILICON INC·Filed 2009·Granted Aug 9, 2011·3 cites·24 claims
- 2356US2025147724A1Binary floating-point in-memory multiplication deviceFLASHSILICON INC·Filed 2023·Application pending·0 cites
- 2455US11600320B2Perpectual digital perceptronFLASHSILICON INC·Filed 2019·Granted Mar 7, 2023·0 cites·17 claims
- 2555US7983087B2Methods and structures for reading out non-volatile memory using NVM cells as a load elementFLASHSILICON INC·Filed 2010·Granted Jul 19, 2011·1 cites·10 claims
- 2655US2024428062A1Neuron metal oxide semiconductor devices and circuits fabricated with cmos logic process technologyFLASHSILICON INC·Filed 2023·Application pending·0 cites
- 2754US7660154B2Level verification and adjustment for multi-level cell (MLC) non-volatile memory (NVM)FLASHSILICON INC·Filed 2008·Granted Feb 9, 2010·2 cites·20 claims
- 2852US11662980B2In-memory arithmetic processorsFLASHSILICON INC·Filed 2019·Granted May 30, 2023·0 cites·18 claims
- 2951US11031079B1Dynamic digital perceptronFLASHSILICON INC·Filed 2019·Granted Jun 8, 2021·0 cites·21 claims
- 3051US2024296883A1Operation scheme for four transistor static random access memoryFLASHSILICON INC·Filed 2024·Application pending·0 cites
- 3150US8809147B2Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the sameFLASHSILICON INC·Filed 2013·Granted Aug 19, 2014·0 cites·8 claims
- 3248US11461074B2Multiple-digit binary in-memory multiplier devicesFLASHSILICON INC·Filed 2020·Granted Oct 4, 2022·0 cites·29 claims
- 3347US11200029B2Extendable multiple-digit base-2n in-memory adder deviceFLASHSILICON INC·Filed 2020·Granted Dec 14, 2021·0 cites·22 claims
- 3447US10148254B2Standby current reduction in digital circuitriesFLASHSILICON INC·Filed 2017·Granted Dec 4, 2018·0 cites·21 claims
- 3546US12020143B2Digital neuromorphic code processorFLASHSILICON INC·Filed 2018·Granted Jun 25, 2024·0 cites·15 claims
- 3645US9117518B2Non-volatile register and non-volatile shift registerFLASHSILICON INC·Filed 2012·Granted Aug 25, 2015·0 cites·17 claims
- 3741US8031524B2Structures and methods to store information representable by a multiple-bit binary word in electrically erasable, programmable read-only memory (EEPROM)FLASHSILICON INC·Filed 2009·Granted Oct 4, 2011·0 cites·21 claims
- 3840US2015325302A1Non-volatile register and non-volatile shift registerFLASHSILICON INC·Filed 2015·Application pending·0 cites
- 3937US10068772B2Recess channel semiconductor non-volatile memory device and fabricating the sameFLASHSILICON INC·Filed 2015·Granted Sep 4, 2018·0 cites·14 claims
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