Assignee
HACHIGO AKIHIRO
JP·4 granted patents·3 pending applications·2 citations·filing 2007–2012
Top patents by PatentIndex Score
7 records- 0165US8124498B2Method of manufacturing group III nitride semiconductor layer bonded substrateHACHIGO AKIHIRO·Filed 2009·Granted Feb 28, 2012·2 cites·5 claims
- 0261US8183668B2Gallium nitride substrateHACHIGO AKIHIRO·Filed 2010·Granted May 22, 2012·0 cites·9 claims
- 0361US2012208355A1Gallium nitride substrateHACHIGO AKIHIRO·Filed 2012·Application pending·0 cites
- 0458US8115927B2Production method of compound semiconductor memberHACHIGO AKIHIRO·Filed 2009·Granted Feb 14, 2012·0 cites·6 claims
- 0556US8177911B2Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member and gallium nitride compound semiconductor membraneHACHIGO AKIHIRO·Filed 2007·Granted May 15, 2012·0 cites·6 claims
- 0649US2012100643A1Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membraneHACHIGO AKIHIRO·Filed 2012·Application pending·0 cites
- 0746US2011315997A1GaN Substrate and Method of Its Manufacture, Method of Manufacturing GaN Layer-Bonded Substrate, and Method of Manufacturing Semiconductor DeviceHACHIGO AKIHIRO·Filed 2009·Application pending·0 cites
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