Damage evaluation method of compound semiconductor member, production method of compound semiconductor member, gallium nitride compound semiconductor member, and gallium nitride compound semiconductor membrane

Abstract

A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement.

1 - 29 . (canceled) 
     
     
         30 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when an absolute value of an extremum of a first derivative of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         31 . (canceled) 
     
     
         32 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         33 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when an absolute value of an extremum of a first derivative of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         34 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a wavelength at which an absolute value of a slope of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an imaginary part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is maximum, is not less than a predetermined threshold.   
     
     
         35 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         36 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a longer wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         37 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a wavelength at which an absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum in a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is maximum, is not less than a predetermined threshold.   
     
     
         38 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex index of refraction obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         39 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         40 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a maximum absolute value of a slope in a portion located on a longer wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         41 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a wavelength at which an absolute value of a slope in a portion located on a shorter wavelength side than a wavelength corresponding to a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is maximum, is not less than a predetermined threshold.   
     
     
         42 . A method of producing a compound semiconductor member, comprising:
 a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and   a step of determining that the compound semiconductor member is nondefective when a maximum of a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of a real part of a complex dielectric constant obtained by the spectroscopic ellipsometry measurement is not less than a predetermined threshold.   
     
     
         43 - 70 . (canceled)