Inventor · disambiguated record
Keiji Ishibashi
Also filed as: ISHIBASHI KEIJI
73 granted patents·38 pending applications·1,033 citations·filing 1998–2025
99Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES60ISHIBASHI KEIJI18CANON ANELVA CORP10ANELVA CORP4SUMITOMO ELECTRIC FINE POLYMER INC3
Top patents by PatentIndex Score
111 records- 0199US6955836B2Silicon oxide film formation methodNEC CORP·Filed 2002·Granted Oct 18, 2005·585 cites·4 claims
- 0298US7816238B2GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Oct 19, 2010·43 cites·8 claims
- 0396US7416604B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Aug 26, 2008·41 cites·2 claims
- 0493US7854804B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Dec 21, 2010·16 cites·4 claims
- 0592US7863609B2Compound semiconductor substrate, semiconductor device, and processes for producing themSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Jan 4, 2011·8 cites·9 claims
- 0691US9312165B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 12, 2016·9 cites·7 claims
- 0791US8975643B2Silicon carbide single-crystal substrate and method for manufacturing sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 10, 2015·9 cites·6 claims
- 0891US8828140B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 9, 2014·7 cites·8 claims
- 0990US9184246B2Silicon carbide substrate, semiconductor device, and methods for manufacturing themSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Nov 10, 2015·7 cites·11 claims
- 1090US8771552B2Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2010·Granted Jul 8, 2014·10 cites·9 claims
- 1189US8192543B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2008·Granted Jun 5, 2012·9 cites·3 claims
- 1289US8183669B2Nitride semiconductor wafer having a chamfered edgeISHIBASHI KEIJI·Filed 2011·Granted May 22, 2012·8 cites·5 claims
- 1388US8586998B2Silicon carbide substrate manufacturing method and silicon carbide substrateINOUE HIROKI·Filed 2012·Granted Nov 19, 2013·8 cites·2 claims
- 1487US6593548B2Heating element CVD systemJAPAN GOVERNMENT·Filed 2001·Granted Jul 15, 2003·36 cites·19 claims
- 1587US6375756B1Method for removing a deposited filmANELVA CORP·Filed 2000·Granted Apr 23, 2002·38 cites·12 claims
- 1687US6365009B1Combined RF-DC magnetron sputtering methodANELVA CORP·Filed 1998·Granted Apr 2, 2002·70 cites·12 claims
- 1786US7901960B2Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Mar 8, 2011·8 cites·7 claims
- 1885US9437690B2Silicon carbide substrate, semiconductor device, and methods for manufacturing themSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Sep 6, 2016·3 cites·11 claims
- 1984US9252322B2Epitaxial film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating deviceCANON ANELVA CORP·Filed 2012·Granted Feb 2, 2016·6 cites·9 claims
- 2084US9136337B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Sep 15, 2015·7 cites·10 claims
- 2183US6942892B1Hot element CVD apparatus and a method for removing a deposited filmANELVA CORP·Filed 2000·Granted Sep 13, 2005·24 cites·6 claims
- 2282US8952494B2Group III nitride semiconductor substrate having a sulfide in a surface layerISHIBASHI KEIJI·Filed 2012·Granted Feb 10, 2015·1 cites·16 claims
- 2382US7872331B2Nitride semiconductor waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jan 18, 2011·7 cites·9 claims
- 2482US7851381B2Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Dec 14, 2010·8 cites·15 claims
- 2581US10600676B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 24, 2020·2 cites·14 claims
- 2677US8030681B2Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Oct 4, 2011·4 cites·3 claims
- 2776US9299890B2III nitride semiconductor substrate, epitaxial substrate, and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Mar 29, 2016·0 cites·10 claims
- 2875US9923063B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 20, 2018·3 cites·14 claims
- 2975US9105756B2Silicon carbide substrate, semiconductor device, and methods for manufacturing themISHIBASHI KEIJI·Filed 2012·Granted Aug 11, 2015·2 cites·15 claims
- 3075US9070828B2III nitride semiconductor substrate, epitaxial substrate, and semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jun 30, 2015·2 cites·3 claims
- 3175US7981216B2Vacuum processing apparatusCANON ANELVA CORP·Filed 2005·Granted Jul 19, 2011·2 cites·2 claims
- 3275US7494892B2Method of measuring warpage of rear surface of substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 24, 2009·4 cites·16 claims
- 3374US9917004B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Mar 13, 2018·2 cites·9 claims
- 3473US8471364B2Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrateISHIBASHI KEIJI·Filed 2011·Granted Jun 25, 2013·2 cites·4 claims
- 3572US9117758B2Substrate, semiconductor device, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Aug 25, 2015·1 cites·11 claims
- 3672US9093384B2Substrate, semiconductor device, and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jul 28, 2015·1 cites·12 claims
- 3772US7507668B2Polishing slurry, method of treating surface of GaxIn1-xAsyP1-y crystal and GaxIn1-xAsyP1-y crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2006·Granted Mar 24, 2009·3 cites·5 claims
- 3871US7662239B2Method of producing group 3 nitride substrate wafers and group 3 nitride substrate wafersSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Feb 16, 2010·3 cites·20 claims
- 3970US10186451B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jan 22, 2019·1 cites·6 claims
- 4069US7919343B2Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Apr 5, 2011·3 cites·13 claims
- 4167US11094537B2Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted Aug 17, 2021·0 cites·15 claims
- 4265US9708735B2Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the sameISHIBASHI KEIJI·Filed 2012·Granted Jul 18, 2017·2 cites·12 claims
- 4365US9312340B2Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Apr 12, 2016·1 cites·10 claims
- 4465US8101523B2Method of processing of nitride semiconductor wafer, nitride semiconductor wafer, method of producing nitride semiconductor device and nitride semiconductor deviceISHIBASHI KEIJI·Filed 2010·Granted Jan 24, 2012·1 cites·5 claims
- 4565US7973322B2Nitride semiconductor light emitting device and method for forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Jul 5, 2011·2 cites·12 claims
- 4665US7883775B2Diamond film coated tool and process for producing the sameALMT CORP·Filed 2003·Granted Feb 8, 2011·11 cites·15 claims
- 4764US10113248B2Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Oct 30, 2018·0 cites·9 claims
- 4863US7211152B2Heating element CVD system and connection structure between heating element and electric power supply mechanism in the heating element CVD systemANELVA CORP·Filed 2003·Granted May 1, 2007·9 cites·8 claims
- 4962US10078059B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Sep 18, 2018·0 cites·6 claims
- 5062US9570540B2Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Feb 14, 2017·0 cites·8 claims
Showing the top 50 of 111 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →