Assignee
HERNER S BRAD
US·11 granted patents·3 pending applications·28 citations·filing 2004–2012
Top patents by PatentIndex Score
14 records- 0182US8072791B2Method of making nonvolatile memory device containing carbon or nitrogen doped diodeHERNER S BRAD·Filed 2007·Granted Dec 6, 2011·7 cites·21 claims
- 0280US8501522B2Intermetal stack for use in a photovoltaic cellHERNER S BRAD·Filed 2011·Granted Aug 6, 2013·4 cites·19 claims
- 0375US8178419B2Method to texture a lamina surface within a photovoltaic cellHERNER S BRAD·Filed 2008·Granted May 15, 2012·2 cites·6 claims
- 0473US8243509B2Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor materialHERNER S BRAD·Filed 2011·Granted Aug 14, 2012·3 cites·8 claims
- 0568US8102694B2Nonvolatile memory device containing carbon or nitrogen doped diodeHERNER S BRAD·Filed 2007·Granted Jan 24, 2012·6 cites·22 claims
- 0666US8314477B2Deposited semiconductor structure to minimize N-type dopant diffusion and method of makingHERNER S BRAD·Filed 2011·Granted Nov 20, 2012·1 cites·20 claims
- 0762US9070801B2Method to texture a lamina surface within a photovoltaic cellHERNER S BRAD·Filed 2012·Granted Jun 30, 2015·0 cites·6 claims
- 0856US8431492B2Memory cell that includes a sidewall collar for pillar isolation and methods of forming the sameHERNER S BRAD·Filed 2010·Granted Apr 30, 2013·1 cites·19 claims
- 0956US8203864B2Memory cell and methods of forming a memory cell comprising a carbon nanotube fabric element and a steering elementHERNER S BRAD·Filed 2011·Granted Jun 19, 2012·1 cites·20 claims
- 1051US2008315206A1Highly Scalable Thin Film TransistorHERNER S BRAD·Filed 2007·Application pending·0 cites
- 1147US8482973B2Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor materialHERNER S BRAD·Filed 2012·Granted Jul 9, 2013·0 cites·20 claims
- 1244US2009086521A1Multiple antifuse memory cells and methods to form, program, and sense the sameHERNER S BRAD·Filed 2007·Application pending·0 cites
- 1344US2010288996A1Memory arrays including memory levels that share conductors, and methods of forming such memory arraysHERNER S BRAD·Filed 2010·Application pending·0 cites
- 1443US8637366B2Nonvolatile memory cell without a dielectric antifuse having high- and low-impedance statesHERNER S BRAD·Filed 2004·Granted Jan 28, 2014·3 cites·14 claims
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