Assignee
HUANG TSUNG-YI
TW·37 granted patents·17 pending applications·63 citations·filing 2008–2016
Top patents by PatentIndex Score
54 records- 0192US8143130B1Method of manufacturing depletion MOS deviceHUANG TSUNG-YI·Filed 2010·Granted Mar 27, 2012·15 cites·8 claims
- 0288US8575693B1Double diffused metal oxide semiconductor deviceHUANG TSUNG-YI·Filed 2012·Granted Nov 5, 2013·11 cites·10 claims
- 0386US8389341B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2011·Granted Mar 5, 2013·8 cites·14 claims
- 0484US8772900B2Trench Schottky barrier diode and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Jul 8, 2014·7 cites·10 claims
- 0574US9257421B2Transient voltage suppression device and manufacturing method thereofHUANG TSUNG-YI·Filed 2015·Granted Feb 9, 2016·3 cites·10 claims
- 0672US8859375B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Oct 14, 2014·2 cites·5 claims
- 0772US8129783B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2008·Granted Mar 6, 2012·4 cites·20 claims
- 0869US8685824B2Hybrid high voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Apr 1, 2014·2 cites·7 claims
- 0968US9287394B2Lateral double diffused metal oxide semiconductor device and manufacturing method thereofHUANG TSUNG-YI·Filed 2014·Granted Mar 15, 2016·2 cites·1 claims
- 1066US9343538B2High voltage device with additional isolation region under gate and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted May 17, 2016·2 cites·6 claims
- 1166US8643136B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Feb 4, 2014·2 cites·5 claims
- 1266US8525258B2Method for controlling impurity density distribution in semiconductor device and semiconductor device made therebyHUANG TSUNG-YI·Filed 2010·Granted Sep 3, 2013·2 cites·4 claims
- 1362US8963237B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Feb 24, 2015·1 cites·7 claims
- 1462US8114725B1Method of manufacturing MOS device having lightly doped drain structureHUANG TSUNG-YI·Filed 2010·Granted Feb 14, 2012·1 cites·9 claims
- 1560US8421150B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Apr 16, 2013·1 cites·4 claims
- 1656US9012989B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2014·Granted Apr 21, 2015·0 cites·4 claims
- 1755US9018070B2Transient voltage suppressor circuit, and diode device therefor and manufacturing method thereofHUANG TSUNG-YI·Filed 2014·Granted Apr 28, 2015·0 cites·3 claims
- 1853US8710633B2Semiconductor overlapped PN structure and manufacturing method thereofHUANG TSUNG-YI·Filed 2013·Granted Apr 29, 2014·0 cites·4 claims
- 1952US9018703B2Hybrid high voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2014·Granted Apr 28, 2015·0 cites·8 claims
- 2051US8912601B2Double diffused drain metal oxide semiconductor device and manufacturing method thereofHUANG TSUNG-YI·Filed 2014·Granted Dec 16, 2014·0 cites·6 claims
- 2151US8859373B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2013·Granted Oct 14, 2014·0 cites·3 claims
- 2250US9117901B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2015·Granted Aug 25, 2015·0 cites·7 claims
- 2349US9105656B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2013·Granted Aug 11, 2015·0 cites·5 claims
- 2449US8860082B2Transient voltage suppressor circuit, and diode device therefor and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Oct 14, 2014·0 cites·9 claims
- 2549US8835258B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2013·Granted Sep 16, 2014·0 cites·5 claims
- 2649US8686504B2Double diffused drain metal oxide semiconductor device and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Apr 1, 2014·0 cites·6 claims
- 2749US8524586B2Semiconductor overlapped PN structure and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Sep 3, 2013·0 cites·6 claims
- 2847US9105491B2Semiconductor structure and semiconductor device having the sameHUANG TSUNG-YI·Filed 2013·Granted Aug 11, 2015·0 cites·12 claims
- 2945US9484437B2Lateral double diffused metal oxide semiconductor device and manufacturing method thereofHUANG TSUNG-YI·Filed 2016·Granted Nov 1, 2016·0 cites·4 claims
- 3045US2013093011A1High Voltage Device and Manufacturing Method ThereofHUANG TSUNG-YI·Filed 2011·Application pending·0 cites
- 3144US2015091087A1Metal oxide semiconductor (mos) device and manufacturing method thereofHUANG TSUNG-YI·Filed 2014·Application pending·0 cites
- 3241US2014179079A1Manufacturing method of lateral double diffused metal oxide semiconductor deviceHUANG TSUNG-YI·Filed 2013·Application pending·0 cites
- 3341US2014315358A1Manufacturing method of junction field effect transistorHUANG TSUNG-YI·Filed 2013·Application pending·0 cites
- 3441US2015097269A1Transient voltage suppression device and manufacturing method thereofHUANG TSUNG-YI·Filed 2013·Application pending·0 cites
- 3540US8907432B2Isolated device and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Dec 9, 2014·0 cites·4 claims
- 3640US8686500B2Double diffused metal oxide semiconductor device and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Apr 1, 2014·0 cites·10 claims
- 3740US2014001551A1Lateral Double Diffused Metal Oxide Semiconductor Device and Manufacturing Method ThereofHUANG TSUNG-YI·Filed 2012·Application pending·0 cites
- 3839US8754476B2High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Granted Jun 17, 2014·0 cites·10 claims
- 3939US2014061786A1Double Diffused Metal Oxide Semiconductor Device and Manufacturing Method ThereofHUANG TSUNG-YI·Filed 2012·Application pending·0 cites
- 4039US2014048815A1Schottky barrier diode and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Application pending·0 cites
- 4138US2013181253A1Semiconductor structure and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Application pending·0 cites
- 4238US2013270634A1High voltage device and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Application pending·0 cites
- 4337US8841723B2LDMOS device having increased punch-through voltage and method for making sameHUANG TSUNG-YI·Filed 2010·Granted Sep 23, 2014·0 cites·2 claims
- 4437US8759913B2Double diffused drain metal oxide semiconductor device and manufacturing method thereofHUANG TSUNG-YI·Filed 2012·Granted Jun 24, 2014·0 cites·8 claims
- 4537US2015054070A1Electrostatic Discharge Protection Device and Manufacturing Method ThereofHUANG TSUNG-YI·Filed 2013·Application pending·0 cites
- 4637US2012193707A1High voltage multigate device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Application pending·0 cites
- 4737US2012161236A1Electrostatic discharge protection device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Application pending·0 cites
- 4836US2012319202A1High Voltage Device and Manufacturing Method ThereofHUANG TSUNG-YI·Filed 2011·Application pending·0 cites
- 4936US2012161235A1Electrostatic discharge protection device and manufacturing method thereofHUANG TSUNG-YI·Filed 2011·Application pending·0 cites
- 5035US9627524B2High voltage metal oxide semiconductor device and method for making sameHUANG TSUNG-YI·Filed 2010·Granted Apr 18, 2017·0 cites·3 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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