Assignee
IWATA HIROKAZU
JP·7 granted patents·3 pending applications·4 citations·filing 2006–2016
Top patents by PatentIndex Score
10 records- 0177US8337617B2Manufacturing method and manufacturing apparatus of a group III nitride crystalIWATA HIROKAZU·Filed 2006·Granted Dec 25, 2012·2 cites·4 claims
- 0274US9464367B2Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrateIWATA HIROKAZU·Filed 2014·Granted Oct 11, 2016·1 cites·2 claims
- 0368US9376763B2Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogenIWATA HIROKAZU·Filed 2012·Granted Jun 28, 2016·0 cites·6 claims
- 0460US8475593B2Crystal preparing device, crystal preparing method, and crystalIWATA HIROKAZU·Filed 2011·Granted Jul 2, 2013·1 cites·5 claims
- 0559US2016362815A1Method for producing n-type group iii nitride single crystal, n-type group iii nitride single crystal, and crystal substrateIWATA HIROKAZU·Filed 2016·Application pending·0 cites
- 0658US8858908B2Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrateIWATA HIROKAZU·Filed 2011·Granted Oct 14, 2014·0 cites·2 claims
- 0755US2007215034A1Crystal preparing device, crystal preparing method, and crystalIWATA HIROKAZU·Filed 2007·Application pending·0 cites
- 0850US9365948B2Group III nitride crystal and manufacturing method thereofIWATA HIROKAZU·Filed 2012·Granted Jun 14, 2016·0 cites·5 claims
- 0950US8323404B2Group III nitride crystal and manufacturing method thereofIWATA HIROKAZU·Filed 2006·Granted Dec 4, 2012·0 cites·14 claims
- 1045US2011012235A1Method of growing group iii nitride crystal, group iii nitride crystal grown thereby, group iii nitride crystal growing apparatus and semiconductor deviceIWATA HIROKAZU·Filed 2010·Application pending·0 cites
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