Method of growing group iii nitride crystal, group iii nitride crystal grown thereby, group iii nitride crystal growing apparatus and semiconductor device

Abstract

A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.

1 - 49 . (canceled) 
     
     
         50 . A crystal comprising:
 a group III nitride crystal;   wherein the group III nitride crystal has a resistivity greater than or equal to 10 4  Ωcm.   
     
     
         51 . The crystal as claimed in  claim 50 , wherein the group III nitride crystal has a length of approximately 5 mm or greater. 
     
     
         52 . The crystal as claimed in  claim 51 , wherein the group III nitride crystal has a defect density, obtained by an etch pit density evaluation, of 10 6  cm −2  or less. 
     
     
         53 . The crystal as claimed in  claim 50 , wherein the group III nitride crystal has a defect density, obtained by an etch pit density evaluation, of 10 6  cm −2  or less. 
     
     
         54 . The crystal as claimed in  claim 50 , wherein the group III nitride crystal is plate-shaped or columnar. 
     
     
         55 . The crystal as claimed in  claim 50 , wherein the group III nitride crystal is semi-insulative. 
     
     
         56 . A group III nitride crystal structure comprising:
 a seed crystal; and   the crystal as claimed in  claim 50  grown on the seed crystal.   
     
     
         57 . The group III nitride crystal structure as claimed in  claim 56 , wherein the group III nitride crystal is grown on a principal plane of a plate-shaped seed crystal. 
     
     
         58 . The group III nitride crystal structure as claimed in  claim 57 , wherein the plate-shaped seed crystal is a plate-shaped group III nitride having a c-plane as the principal plane thereof. 
     
     
         59 . The group III nitride crystal structure as claimed in  claim 56 , wherein the group III nitride crystal has a length of approximately 5 mm or greater. 
     
     
         60 . The group III nitride crystal structure as claimed in  claim 59 , wherein the group III nitride crystal has a defect density, obtained by an etch pit density evaluation, of 10 6  cm −2  or less. 
     
     
         61 . The group III nitride crystal structure as claimed in  claim 56 , wherein the group III nitride crystal has a defect density, obtained by an etch pit density evaluation, of 10 6  cm −2  or less. 
     
     
         62 . The group III nitride crystal structure as claimed in  claim 56 , wherein the group III nitride crystal is plate-shaped or columnar. 
     
     
         63 . A semiconductor device comprising:
 a substrate having a surface made of the crystal as claimed in  claim 50 ; and   a stacked structure provided on the surface of the substrate.   
     
     
         64 . The semiconductor device as claimed in  claim 63 , wherein the stacked structure includes a transistor structure. 
     
     
         65 . The semiconductor device as claimed in  claim 63 , wherein the group III nitride crystal has a defect density, obtained by an etch pit density evaluation, of 10 6  cm −2  or less.