Inventor · disambiguated record
Hisanori Yamane
Also filed as: YAMANE HISANORI
22 granted patents·4 pending applications·671 citations·filing 1988–2017
96Inventor score
Files withRICOH KK9SARAYAMA SEIJI5SUMITOMO METAL MINING CO2YAMANE HISANORI2CORNELL RES FOUNDATION INC1
Top patents by PatentIndex Score
26 records- 0198US6592663B1Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH KK·Filed 2000·Granted Jul 15, 2003·167 cites·51 claims
- 0295US6780239B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2001·Granted Aug 24, 2004·40 cites·20 claims
- 0393US5868837ALow temperature method of preparing GaN single crystalsCORNELL RES FOUNDATION INC·Filed 1998·Granted Feb 9, 1999·263 cites·3 claims
- 0492US6949140B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2002·Granted Sep 27, 2005·49 cites·69 claims
- 0586US7508003B2Production of a GaN bulk crystal substrate and a semiconductor device formed thereonRICOH KK·Filed 2006·Granted Mar 24, 2009·8 cites·19 claims
- 0685US7531038B2Crystal growth methodRICOH KK·Filed 2005·Granted May 12, 2009·9 cites·3 claims
- 0784US6717048B2Electromagnetic shielding plate and method for producing the sameSUMITOMO CHEMICAL CO·Filed 2002·Granted Apr 6, 2004·24 cites·14 claims
- 0882US7261775B2Methods of growing a group III nitride crystalRICOH KK·Filed 2004·Granted Aug 28, 2007·22 cites·21 claims
- 0982US7001457B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceRICOH KK·Filed 2002·Granted Feb 21, 2006·31 cites·20 claims
- 1077US7250640B2Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH KK·Filed 2003·Granted Jul 31, 2007·14 cites·13 claims
- 1174US7828896B2Methods of growing a group III nitride crystalRICOH KK·Filed 2007·Granted Nov 9, 2010·4 cites·15 claims
- 1272US2013330264A1Crystal growth method, crystal growth apparatus, group-iii nitride crystal and group-iii nitride semiconductor deviceSARAYAMA SEIJI·Filed 2013·Application pending·0 cites
- 1368US8623138B2Crystal growth apparatusSARAYAMA SEIJI·Filed 2009·Granted Jan 7, 2014·2 cites·25 claims
- 1467US4920014AZirconia film and process for preparing itSUMITOMO METAL MINING CO·Filed 1988·Granted Apr 24, 1990·19 cites·6 claims
- 1563US8562737B2Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor deviceSARAYAMA SEIJI·Filed 2008·Granted Oct 22, 2013·0 cites·19 claims
- 1662US8591647B2Production of a GaN bulk crystal substrate and a semiconductor device formed thereonSARAYAMA SEIJI·Filed 2009·Granted Nov 26, 2013·1 cites·19 claims
- 1757US9869033B2Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrateRICOH CO LTD·Filed 2015·Granted Jan 16, 2018·0 cites·4 claims
- 1855US10011768B2Phosphor, light-emitting device, illumination device and image display deviceMITSUBISHI CHEM CORP·Filed 2017·Granted Jul 3, 2018·0 cites·8 claims
- 1955US4985117AMethod of manufacturing josephson junctionsRIKEN KK·Filed 1990·Granted Jan 15, 1991·13 cites·13 claims
- 2055US2014044970A1PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATESARAYAMA SEIJI·Filed 2013·Application pending·0 cites
- 2149US2005026318A1Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor deviceFiled 2004·Application pending·0 cites
- 2245US5145720AChemical vapor deposition of dense and transparent zirconia filmsSUMITOMO METAL MINING CO·Filed 1990·Granted Sep 8, 1992·5 cites·6 claims
- 2345US2011012235A1Method of growing group iii nitride crystal, group iii nitride crystal grown thereby, group iii nitride crystal growing apparatus and semiconductor deviceIWATA HIROKAZU·Filed 2010·Application pending·0 cites
- 2440US9590939B2Mail server, mail transmitting/receiving method, and mail transmitting/receiving programYAMANE HISANORI·Filed 2014·Granted Mar 7, 2017·0 cites·3 claims
- 2540US8809797B2Scintillator for neutrons and neutron detectorYAMANE HISANORI·Filed 2011·Granted Aug 19, 2014·0 cites·12 claims
- 2637US9255010B2Boride having chemical composition Na—Si—B, and polycrystalline reaction sintered product of boride and process for production thereofMORITO HARUHIKO·Filed 2011·Granted Feb 9, 2016·0 cites·2 claims
Join the waitlist — get patent alerts
Get an alert when Hisanori Yamane files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →